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quality SOT23 packaged transistor High Diode MMBT5551 NPN type for medium power amplification and switching factory
quality SOT23 packaged transistor High Diode MMBT5551 NPN type for medium power amplification and switching factory

SOT23 packaged transistor High Diode MMBT5551 NPN type for medium power amplification and switching

Key Attributes
Model Number: MMBT5551
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Mfr. Part #:
MMBT5551
Package:
SOT-23
Product Description

MMBT5551 Transistor - NPN, SOT-23

The MMBT5551 is a high-performance NPN transistor in a SOT-23 package, designed for medium power amplification and switching applications. Its complementary to MMBT5401, offering reliable performance for various electronic circuits.

Product Attributes

  • Brand: High Diode Semiconductor
  • Package: SOT-23
  • Classification: Plastic-Encapsulate Transistors
  • Transistor Type: NPN

Technical Specifications

nA nA pF
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Voltage V 180 V
Collector-Emitter Voltage VCEO 160 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 600 mA
Collector Power Dissipation PC 300 mW
Thermal Resistance Junction To Ambient RJA 416 /W
Junction Temperature Tj 150
Storage Temperature Tstg -55 +150
Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 180 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 160 V
Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 6 V
Collector cut-off current ICBO VCB=120V, IE=0 50
Emitter cut-off current IEBO VEB=4V, IC=0 50
DC current gain (hFE(1)) hFE VCE=5V, IC=1mA 80
DC current gain (hFE(2)) hFE VCE=5V, IC=10mA 100 300
DC current gain (hFE(3)) hFE VCE=5V, IC=50mA 50
Collector-emitter saturation voltage (VCE(sat)1) VCE(sat) IC=10mA, IB=1mA 0.15 V
Collector-emitter saturation voltage (VCE(sat)2) VCE(sat) IC=50mA, IB=5mA 0.2 V
Base-emitter saturation voltage (VBE(sat)1) VBE(sat) IC=10mA, IB=1mA 1 V
Base-emitter saturation voltage (VBE(sat)2) VBE(sat) IC=50mA, IB=5mA 1 V
Transition frequency fT VCE=10V,IC=10mA, f=100MHz 100 300 MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 6

1912171434_High-Diode-MMBT5551_C466641.pdf

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