electronic component High Diode MMBTA42 NPN transistor with high breakdown voltage and low saturation voltage
Key Attributes
Model Number:
MMBTA42
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
250nA
Pd - Power Dissipation:
350mW
Transition Frequency(fT):
50MHz
Type:
NPN
Current - Collector(Ic):
300mA
Collector - Emitter Voltage VCEO:
300V
Operating Temperature:
-
Mfr. Part #:
MMBTA42
Package:
SOT-23
Product Description
Product Overview
The MMBTA42 is a high-performance NPN transistor in a SOT-23 package, designed for applications requiring high breakdown voltage and low collector-emitter saturation voltage. It serves as a complementary device to the MMBTA92 (PNP). Its robust design and electrical characteristics make it suitable for various electronic circuits.
Product Attributes
- Brand: High Diode Semiconductor
- Package: SOT-23
- Type: NPN Transistor
- Complementary to: MMBTA92 (PNP)
Technical Specifications
| Symbol | Parameter | Value | Unit | Test Conditions |
|---|---|---|---|---|
| VCEO | Collector-Emitter Voltage | 300 | V | |
| VEBO | Emitter-Base Voltage | 5 | V | |
| IC | Collector Current | 300 | mA | |
| PC | Collector Power Dissipation | 350 | mW | |
| RJA | Thermal Resistance From Junction To Ambient | 357 | /W | |
| Tj | Junction Temperature | 150 | ||
| Tstg | Storage Temperature | -55+150 | ||
| V(BR)CBO | Collector-base breakdown voltage | 300 | V | IC= 100A,IE=0 |
| V(BR)CEO | Collector-emitter breakdown voltage | 300 | V | IC= 1mA, IB=0 |
| V(BR)EBO | Emitter-base breakdown voltage | 5 | V | IE= 100A, IC=0 |
| ICBO | Collector cut-off current | 0.25 | A | VCB=200V, IE=0 |
| IEBO | Emitter cut-off current | 0.1 | A | VEB= 5V, IC=0 |
| hFE | DC current gain | 60 | VCE= 10V, IC= 1mA | |
| 100-200 | VCE= 10V, IC=10mA | |||
| 60 | VCE=10V, IC=30mA | |||
| VCE(sat) | Collector-emitter saturation voltage | 0.2 | V | IC=20mA, IB= 2mA |
| VBE(sat) | Base-emitter saturation voltage | 0.9 | V | IC= 20mA, IB=2mA |
| fT | Transition frequency | 50 | MHz | VCE= 20V, IC= 10mA, f=30MHz |
2410121332_High-Diode-MMBTA42_C466651.pdf
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