Fast switching P channel mosfet HUASHUO HSP100P06 60 volt rating with excellent gate charge and low RDS ON resistance
Key Attributes
Model Number:
HSP100P06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
5.5mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
50pF@30V
Number:
1 P-Channel
Input Capacitance(Ciss):
5.2nF@30V
Pd - Power Dissipation:
210W
Gate Charge(Qg):
85nC@10V
Mfr. Part #:
HSP100P06
Package:
TO-220
Product Description
Product Overview
The HSP100P06 is a P-channel, 60V fast switching MOSFET featuring high cell density, providing excellent RDS(ON) and gate charge for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.Product Attributes
- Brand: HS-Semi
- Channel Type: P-Channel
- RoHS and Green Product compliant
- 100% EAS guaranteed
- Full function reliability approved
Technical Specifications
| Parameter | Value |
|---|---|
| Model | HSP100P06 |
| Voltage Rating (Drain-Source) | 60 V |
| Current Rating (Drain) | -100 A |
| Storage Temperature Range | -55 to 150 °C |
| Typical RDS(ON) | 5.5 mΩ |
2410121642_HUASHUO-HSP100P06_C7543765.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
