PNP Transistor SOT23 Package High Diode BC856B Suitable for Switching and AF Amplifier Applications
Key Attributes
Model Number:
BC856B
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
-
Type:
PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Operating Temperature:
-
Mfr. Part #:
BC856B
Package:
SOT-23
Product Description
Product Overview
The BC856-8 series are PNP bipolar transistors in a SOT-23 plastic-encapsulated package. Ideally suited for automatic insertion, these transistors are designed for switching and AF amplifier applications. They offer high diode semiconductor performance.
Product Attributes
- Brand: High Diode Semiconductor
- Package: SOT-23
- Type: PNP Transistor
Technical Specifications
| Item | Symbol | Unit | Conditions | BC856 | BC857 | BC858 | Value |
| Collector-Base Voltage | VCBO | V | IC= -10A, IE=0 | -80 | -50 | -30 | |
| Collector-Emitter Voltage | VCEO | V | IC= -10mA, IB=0 | -65 | -45 | -30 | |
| Emitter-Base Voltage | VEBO | V | IE= -1A, IC=0 | -5 | |||
| Collector Current | IC | A | -0.1 | ||||
| Total Device Dissipation | PC | W | 0.2 | ||||
| Junction Temperature | Tj | 150 | |||||
| Storage Temperature | TSTG | -55 to +150 | |||||
| Thermal Resistance Junction To Ambient | RJA | /W | 625 | ||||
| Collector cut-off current | ICBO | A | VCB= -70 V , IE=0 | -0.1 | |||
| Collector cut-off current | ICBO | A | VCB= -45 V , IE=0 | -0.1 | |||
| Collector cut-off current | ICBO | A | VCB= -25 V , IE=0 | -0.1 | |||
| Collector cut-off current | ICEO | A | VCE= -60 V , IB=0 | -0.1 | |||
| Collector cut-off current | ICEO | A | VCE= -40 V , IB=0 | -0.1 | |||
| Collector cut-off current | ICEO | A | VCE= -25 V , IB=0 | -0.1 | |||
| Emitter cut-off current | IEBO | A | VEB= -5 V , IC=0 | -0.1 | |||
| DC current gain | hFE | VCE= -5V,IC= -2mA | 125-250 | 220-475 | 420-800 | ||
| Collector-emitter saturation voltage | VCE(sat) | V | IC=-100mA,IB= -5 mA | -0.5 | |||
| Base-emitter saturation voltage | VBE(sat) | V | IC= -100mA, IB= -5mA | -1.1 | |||
| Transition frequency | fT | MHz | VCE= -5 V, IC= -10mA, f=100MHz | 100 | |||
| Collector capacitance | Cob | pF | VCB=-10V, f=1MHz | 4.5 | |||
2411220541_High-Diode-BC856B_C466648.pdf
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