200V P channel MOSFET HUASHUO HSK3P20 with trench technology and full function reliability approval
Key Attributes
Model Number:
HSK3P20
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF@100V
Number:
1 P-Channel
Input Capacitance(Ciss):
500pF@100V
Pd - Power Dissipation:
1.1W
Gate Charge(Qg):
8.5nC@4.5V
Mfr. Part #:
HSK3P20
Package:
SOT-89
Product Description
Product Overview
The HSK3P20 is a P-channel, 200V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for small power switching and load switch applications. This device meets RoHS and Green Product requirements, with full function reliability approved. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and availability as a green device.
Product Attributes
- Brand: HSK
- Channel Type: P-Channel
- Voltage Rating: 200V
- Technology: Trench
- Certifications: RoHS, Green Product
- Packaging: SOT-89, 1000/Tape&Reel
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -200 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1 | -3 | A | |||
| ID@TC=70 | Continuous Drain Current, VGS @ -10V1 | -2 | A | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -10V1 | -0.8 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ -10V1 | -0.6 | A | |||
| IDM | Pulsed Drain Current2 | -3.5 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1.1 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient1 | --- | 120 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 32 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -200 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-3 A | 2.4 | |||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-1 A | 1.9 | 2.4 | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -2.0 | -3.0 | -4.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=-160V , VGS=0V , TJ=25 | --- | 1 | uA | |
| IDSS | Drain-Source Leakage Current | VDS=-160V , VGS=0V , TJ=55 | --- | 10 | uA | |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| gfs | Forward Transconductance | VDS=-5V , ID=-0.8A | 0.5 | --- | S | |
| Qg | Total Gate Charge | VDS=-100V , VGS=-4.5V , ID=-0.5A | 8.5 | --- | nC | |
| Qgs | Gate-Source Charge | 1.5 | --- | |||
| Qgd | Gate-Drain Charge | 1.8 | --- | |||
| td(on) | Turn-On Delay Time | VDD=-100V , VGS=-10V , RG=6 , ID=-0.5A | 1.9 | --- | ns | |
| tr | Rise Time | 1.2 | --- | ns | ||
| td(off) | Turn-Off Delay Time | 22 | --- | ns | ||
| tf | Fall Time | 11 | --- | ns | ||
| Ciss | Input Capacitance | VDS=-100V , VGS=0V , f=1MHz | 500 | --- | pF | |
| Coss | Output Capacitance | 39 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 20 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | --- | -1.2 | A | |
| ISM | Pulsed Source Current2,4 | --- | -3.5 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | -1.3 | V | |
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width <= 300s, duty cycle <= 2%.
3. The power dissipation is limited by 150 junction temperature.
4. The data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
2410122026_HUASHUO-HSK3P20_C22359223.pdf
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