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quality N Channel MOSFET with High Diode 2SK3018 featuring 30V Drain Source Voltage and Low On Resistance factory
quality N Channel MOSFET with High Diode 2SK3018 featuring 30V Drain Source Voltage and Low On Resistance factory

N Channel MOSFET with High Diode 2SK3018 featuring 30V Drain Source Voltage and Low On Resistance

Key Attributes
Model Number: 2SK3018
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
300mA
RDS(on):
1.15Ω@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.3pF
Number:
1 N-channel
Output Capacitance(Coss):
5.2pF
Input Capacitance(Ciss):
29.6pF
Pd - Power Dissipation:
200mW
Gate Charge(Qg):
555.6pC@10V
Mfr. Part #:
2SK3018
Package:
SOT-23
Product Description

Product Overview

This N-Channel MOSFET, compliant with RoHS 3, features a 30V drain-source voltage and low on-resistance, making it ideal for portable equipment due to its low voltage drive capability. It offers fast switching speeds and easily designed drive circuits, facilitating parallel configurations. Applications include interfacing and switching.

Product Attributes

  • Compliance: RoHS 3
  • Semiconductor Type: N-Channel MOSFET
  • Diode Type: High Diode
  • Marking: ABSOLUTE MAXIMUM RATINGS
  • Brand: HIGH DIODE SEMICONDUCTOR

Technical Specifications

Parameter Symbol Test Condition Min Type Max Unit
Drain-Source Voltage V(BR)DSS VGS = VDS , ID =250A 30 V
Zero Gate Voltage Drain Current IDSS VDS =30V,VGS = 0V 100 nA
Gate-Body Leakage Current IGSS VGS =20V, VDS = 0V 2 A
Gate Threshold Voltage VGS(th) VGS = VDS, ID =250A 0.6 1.0 1.5 V
Drain-Source On-Resistance RDS(on) VGS =10V, ID =10mA 0.75 3
Drain-Source On-Resistance RDS(on) VGS =4V, ID =10mA 0.88 3
Drain-Source On-Resistance RDS(on) VGS =2.5V, ID =1mA 1.15 3.5
Forward Transconductance gFS VDS=3V, ID=10mA 20 mS
Input Capacitance Ciss VDS=15V,VGS=0V,f=1MHz 29.6 pF
Output Capacitance Coss VDS=15V,VGS=0V,f=1MHz 5.2 pF
Reverse Transfer Capacitance Crss VDS=15V,VGS=0V,f=1MHz 3.3 pF
Gate Resistance Rg VDS = 0V, VGS = 0V, f = 1MHz 156.9
Total Gate Charge Qg VDS = 15V, VGS = 10V, ID = 0.3A 555.6 pC
Gate-Source Charge Qgs VDS = 15V, VGS = 10V, ID = 0.3A 10 pC
Gate-Drain Charge Qg VDS = 15V, VGS = 10V, ID = 0.3A 428.4 pC
Turn-on Delay Time td(on) VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 15 ns
Rise Time tr VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 35 ns
Turn-off Delay Time td(off) VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 80 ns
Fall Time tf VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 80 ns
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID (Ta=25 unless otherwise noted) 300 mA
Power Dissipation PD (Ta=25 unless otherwise noted) 0.2 W
Thermal Resistance Junction to Ambient RJA 625 /W
Junction Temperature TJ 150
Storage Temperature TSTG -55 ~ +150

Package Outline Dimensions (SOT-23):

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 0.900 1.150 0.035 0.045
A1 0 0.100 0 0.004
A2 0.900 1.050 0.035 0.041
b 0.300 0.500 0.012 0.020
c 0.080 0.150 0.003 0.006
D 2.800 3.000 0.110 0.118
E 1.150 1.500 0.045 0.059
E1 2.250 2.650 0.089 0.104
e 0.950TYP 0.037TYP
e1 1.800 2.000 0.071 0.079
L 0.550REF 0.022REF
L1 0.300 0.500 0.012 0.020
0 8 0 8

Reel Taping Specifications For Surface Mount Devices-SOT-23


2410121326_High-Diode-2SK3018_C22458621.pdf

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