20V N Channel MOSFET Featuring Low Gate Charge and ESD Protection High Diode 2300 for Load Switching
Key Attributes
Model Number:
2300
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.5A
RDS(on):
28mΩ@1.8V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
70pF
Number:
1 N-channel
Output Capacitance(Coss):
78.4pF
Input Capacitance(Ciss):
336pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
6.4nC@4.5V
Mfr. Part #:
2300
Package:
SOT-23
Product Description
Product Overview
This 20V N-Channel MOSFET, housed in a SOT-23 package, utilizes Trench Technology for low on-resistance (RDS(on)) and low gate charge. It features ESD protection and is suitable for applications such as load switching and DC/DC converters. The device is RoHS compliant.
Product Attributes
- Brand: HIGH DIODE SEMICONDUCTOR
- Package Type: SOT-23
- Technology: Trench Technology Power MOSFET
- Certifications: RoHS COMPLIANT
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit | |
|---|---|---|---|---|---|---|---|
| Product Summary | |||||||
| V(BR)DSS | 20 | V | |||||
| RDS(on)TYP | @4.5V | 18 | m | ||||
| @2.5V | 22 | m | |||||
| @1.8V | 28 | m | |||||
| ID | 4.5 | A | |||||
| Absolute Maximum Ratings | |||||||
| Drain - Source Voltage | VDS | (TA = 25) | 20 | V | |||
| Gate - Source Voltage | VGS | (TA = 25) | 12 | V | |||
| Continuous Drain Current | ID | TA = 25 | 4.5 | A | |||
| Pulsed Drain Current | IDM | (TA = 25) | 18 | A | |||
| Power Dissipation | PD | TA = 25 | 1.4 | W | |||
| Thermal Resistance Junction to Ambient | RJA | (TA = 25) | 89 | /W | |||
| Junction Temperature | TJ | 150 | |||||
| Storage Temperature | TSTG | -55 | +150 | ||||
| Electrical Characteristics | |||||||
| Drain - Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250A | 20 | V | |||
| Zero Gate Voltage Drain Current | IDSS | VDS = 20V, VGS = 0V | 1 | A | |||
| Gate - Body Leakage Current | IGSS | VGS = 12V, VDS = 0V | 100 | nA | |||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 0.4 | 0.7 | 1 | V | |
| Drain-source On-resistance | RDS(on) | VGS = 4.5V, ID = 3A | 18 | 32 | m | ||
| VGS = 2.5V, ID = 2A | 22 | 40 | m | ||||
| VGS = 1.8V, ID = 2A | 28 | 62 | m | ||||
| Input Capacitance | Ciss | VDS = 10V, f = 1MHz | 336 | pF | |||
| Output Capacitance | Coss | VDS = 10V, f = 1MHz | 78.4 | pF | |||
| Reverse Transfer Capacitance | Crss | VDS = 10V, f = 1MHz | 70 | pF | |||
| Total Gate Charge | Qg | VDS = 10V, VGS = 4.5V, ID=6A | 6.4 | 8.2 | nC | ||
| Gate-source Charge | Qgs | VDS = 10V, VGS = 4.5V, ID=6A | 1.8 | 2.3 | nC | ||
| Gate-drain Charge | Qg | VDS = 10V, VGS = 4.5V, ID=6A | 1.3 | 1.9 | nC | ||
| Turn-on Delay Time | td(on) | VDS = 10V, VGS = 4.5V, ID = 1A, RGEN=6 | 10.5 | 21 | ns | ||
| Turn-on Rise Time | tr | VDS = 10V, VGS = 4.5V, ID = 1A, RGEN=6 | 4.5 | 9 | ns | ||
| Turn-off Delay Time | td(off) | VDS = 10V, VGS = 4.5V, ID = 1A, RGEN=6 | 27.5 | 55 | ns | ||
| Turn-off Fall Time | tf | VDS = 10V, VGS = 4.5V, ID = 1A, RGEN=6 | 4.3 | 8.6 | ns | ||
| Diode Forward Voltage | VSD | VGS = 0V, IS = 1.7A | 1.2 | V | |||
| Package Outline Dimensions (SOT-23) | |||||||
| Symbol | Dimensions In Millimeters | Min | Max | Symbol | Dimensions In Inches | Min | Max |
| A | 0.900 | 1.150 | A | 0.035 | 0.045 | ||
| A1 | 0.000 | 0.100 | A1 | 0.000 | 0.004 | ||
| A2 | 0.900 | 1.050 | A2 | 0.035 | 0.041 | ||
| b | 0.300 | 0.500 | b | 0.012 | 0.020 | ||
| c | 0.080 | 0.150 | c | 0.003 | 0.006 | ||
| D | 2.800 | 3.000 | D | 0.110 | 0.118 | ||
| E | 1.150 | 1.500 | E | 0.045 | 0.059 | ||
| E1 | 2.250 | 2.650 | E1 | 0.089 | 0.104 | ||
| e | 1.800 | 2.000 | e1 | 0.071 | 0.079 | ||
| L | 0.300 | 0.500 | L1 | 0.012 | 0.020 | ||
| 0 | 8 | 0 | 8 | ||||
| 0.550 REF | 0.022 REF | ||||||
| 0.950 TYP | 0.037 TYP | ||||||
2410121341_High-Diode-2300_C22458616.pdf
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