power MOSFET HUASHUO HSBA3048 featuring 30V rating and advanced trench technology for power management
Key Attributes
Model Number:
HSBA3048
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
1.3mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
196pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
3.432nF@15V
Pd - Power Dissipation:
63W
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
HSBA3048
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA3048 is a high-performance N-Channel, 30V Fast Switching MOSFET designed for efficient power management applications. Featuring advanced trench technology, low gate charge, and high current capability, this MOSFET is ideal for power management in desktop computers and DC/DC converters. It is RoHS and Halogen-Free compliant, ensuring environmental responsibility.
Product Attributes
- Brand: HS-Semi
- Certifications: RoHS and Halogen-Free Compliant
- Technology: Advanced Trench Technology
- Testing: 100% UIS Tested
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSBA3048 | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 30 | -- | -- | V |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=20A | -- | 1.3 | 1.6 | m | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=20A | -- | 1.9 | 2.5 | V | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | 1.6 | 2.2 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=24V , VGS=0V , TJ=25 | -- | -- | 1 | uA | |
| Drain-Source Leakage Current (IDSS) | VDS=24V , VGS=0V , TJ=55 | -- | -- | 5 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | -- | -- | 100 | nA | |
| Forward Transconductance (gfs) | VDS=5V , ID=20A | -- | 35 | -- | S | |
| Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | -- | 1.0 | -- | ||
| Total Gate Charge (Qg) (4.5V) | VDS=15V , VGS=10V , ID=20A | -- | 45 | -- | nC | |
| Gate-Source Charge (Qgs) | -- | 9.8 | -- | |||
| Gate-Drain Charge (Qgd) | -- | 6.5 | -- | |||
| Turn-On Delay Time (Td(on)) | VDD=15V , VGS=10V , RG=3.3, ID=20A | -- | 10.3 | -- | ns | |
| Rise Time (Tr) | -- | 6.2 | -- | |||
| Turn-Off Delay Time (Td(off)) | -- | 56 | -- | |||
| Fall Time (Tf) | -- | 8.4 | -- | |||
| HSBA3048 | Input Capacitance (Ciss) | VDS=15V , VGS=0V , f=1MHz | -- | 3432 | -- | pF |
| Output Capacitance (Coss) | -- | 1916 | -- | |||
| Reverse Transfer Capacitance (Crss) | -- | 196 | -- | |||
| HSBA3048 | Continuous Source Current (IS) | VG=VD=0V , Force Current | -- | -- | 100 | A |
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | -- | -- | 1.2 | V |
| Parameter | Rating | Units |
|---|---|---|
| Drain-Source Voltage (VDS) | 30 | V |
| Gate-Source Voltage (VGS) | 20 | V |
| Continuous Drain Current (ID@TC=25) | 100 | A |
| Continuous Drain Current (ID@TC=100) | 97 | A |
| Continuous Drain Current (ID@TA=25) | 31 | A |
| Continuous Drain Current (ID@TA=70) | 25 | A |
| Pulsed Drain Current (IDM) | 350 | A |
| Single Pulse Avalanche Energy (EAS) | 151 | mJ |
| Avalanche Current (IAS) | 55 | A |
| Total Power Dissipation (PD@TC=25) | 63 | W |
| Storage Temperature Range (TSTG) | -55 to 150 | |
| Operating Junction Temperature Range (TJ) | -55 to 150 | |
| Thermal Resistance Junction-Ambient (RJA) | 50 | /W |
| Thermal Resistance Junction-Case (RJC) | 2 | /W |
| Package Code | Packaging | Quantity |
|---|---|---|
| PRPAK5*6 | Tape&Reel | 3000 |
2410121448_HUASHUO-HSBA3048_C701043.pdf
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