ESD Protected P Channel MOSFET with Low Gate Charge and TrenchFET Technology High Diode 3415
Key Attributes
Model Number:
3415
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-45℃~+125℃
RDS(on):
63mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
160pF
Number:
1 P-Channel
Output Capacitance(Coss):
205pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
1.45nF
Gate Charge(Qg):
17.2nC@4.5V
Mfr. Part #:
3415
Package:
SOT-23
Product Description
Product Overview
This P-Channel MOSFET, encapsulated in a SOT-23 plastic package, offers excellent RDS(ON), low gate charge, and low gate voltages. It features TrenchFET power MOSFET technology and is ESD protected. Ideal for load switching and PWM applications, this RoHS compliant semiconductor is designed for high performance and reliability.
Product Attributes
- Brand: HIGH DIODE SEMICONDUCTOR
- Package Type: SOT-23
- Material: Plastic-Encapsulate
- Compliance: RoHS COMPLIANT
- Diode Type: P-Channel MOSFET
- Gate Protection: ESD protected gate
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | -20 | V | ||||
| RDS(on)TYP | @-4.5V | 33 | m | |||
| @-2.5V | 45 | m | ||||
| @-1.8V | 63 | m | ||||
| ID | -4 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25 unless otherwise noted) | -20 | V | ||
| Gate-Source Voltage | VGS | 10 | V | |||
| Continuous Drain Current (t10s) | ID | -4.0 | A | |||
| Maximum Power Dissipation (t10s) | PD | 0.35 | W | |||
| Thermal Resistance from Junction to Ambient | RJA | 357 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Operating Temperature | TOPR | -45 | +125 | |||
| Storage Temperature | TSTG | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-16V,VGS = 0V | -1 | A | ||
| Gate-body leakage current | IGSS | VGS =10V, VDS = 0V | 10 | A | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -0.4 | -0.65 | -1.0 | V |
| Drain-source on-resistance(1) | RDS(on) | VGS =-4.5V, ID =-4A | 33 | 50 | m | |
| VGS =-2.5V, ID =-4A | 45 | 60 | m | |||
| VGS =-1.8V, ID =-2A | 63 | 100 | m | |||
| Forward tranconductance(2) | gFS | VDS =-5V, ID =-4A | 8 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =-10V,VGS =0V,f=1MHz | 1450 | pF | ||
| Output Capacitance | Coss | 205 | pF | |||
| Reverse Transfer Capacitance | Crss | 160 | pF | |||
| Gate resistance | Rg | VDS =0V,VGS =0V,f =1MHz | 6.5 | |||
| Switching Characteristics | ||||||
| Turn-on delay time(3) | td(on) | VDS=-10V, VGS=-4.5V RGEN =3, RL=2.5 | 9.5 | ns | ||
| Turn-on rise time(3) | tr | 17 | ns | |||
| Turn-off delay time(3) | td(off) | 94 | ns | |||
| Turn-off fall time(3) | tf | 35 | ns | |||
| Total gate charge | Qg | VDS =-10V,VGS =-4.5V,ID =-4A | 17.2 | nC | ||
| Gate-source charge | Qgs | 1.3 | nC | |||
| Gate-drain charge | Qgd | 4.5 | nC | |||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward voltage(2) | VDS | VGS =0V, IS=-1A | -1 | V | ||
| Package Outline Dimensions (SOT-23) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 | 1.150 | 0.035 | 0.045 | ||
| A1 | 0 | 0.100 | 0 | 0.004 | ||
| A2 | 0.900 | 1.050 | 0.035 | 0.041 | ||
| b | 0.300 | 0.500 | 0.012 | 0.020 | ||
| c | 0.080 | 0.150 | 0.003 | 0.006 | ||
| D | 2.800 | 3.000 | 0.110 | 0.118 | ||
| E | 1.150 | 1.500 | 0.045 | 0.059 | ||
| E1 | 2.250 | 2.650 | 0.089 | 0.104 | ||
| e | 0.950TYP | 0.037TYP | ||||
| e1 | 1.800 | 2.000 | 0.071 | 0.079 | ||
| L | 0.550REF | 0.022REF | ||||
| L1 | 0.300 | 0.500 | 0.012 | 0.020 | ||
| 0 | 8 | 0 | 8 | |||
2410121321_High-Diode-3415_C22458618.pdf
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