HL Haolin Elec D965 NPN Transistor with High Current Capability and Low Saturation Voltage SOT-89-3L
Key Attributes
Model Number:
D965
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
750mW
Transition Frequency(fT):
150MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
5A
Collector - Emitter Voltage VCEO:
20V
Operating Temperature:
-
Mfr. Part #:
D965
Package:
SOT-89-3
Product Description
Product Overview
This is a high-performance NPN transistor in a SOT-89-3L package, designed for various electronic applications. It features low collector-emitter saturation voltage, large collector power dissipation, and high current handling capabilities, making it suitable for demanding power applications. The mini-power type package ensures compact integration.
Product Attributes
- Brand: SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD
- Model: D965
- Package Type: SOT-89-3L
- Material: Plastic-Encapsulate
- Marking: 965
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC=100A,IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA,IB=0 | 20 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=10A,IC=0 | 7 | V | ||
| Collector cut-off current | ICBO | VCB=10V,IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=7V,IC=0 | 0.1 | A | ||
| DC current gain | hFE(1) | VCE=2V, IC=1mA | 200 | |||
| hFE(2) | VCE=2V, IC=500mA | 230 | 800 | |||
| hFE(3) | VCE=2V, IC=2A | 150 | ||||
| Collector-emitter saturation voltage | VCE(sat) | IC=3A,IB=0.1A | 1 | V | ||
| Transition frequency | fT | VCE=6V,IC=50mAf=200MHz | 150 | MHz | ||
| Collector output capacitance | Cob | VCB=20V, IE=0, f=1MHz | 50 | pF | ||
| Collector-Base Voltage | VCBO | 40 | V | |||
| Collector-Emitter Voltage | VCEO | 20 | V | |||
| Emitter-Base Voltage | VEBO | 7 | V | |||
| Collector Current | IC | 5 | A | |||
| Collector Power Dissipation | PC | 750 | mW | |||
| Thermal Resistance From Junction To Ambient | RJA | 167 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 |
2410311238_HL-Haolin-Elec-D965_C237241.pdf
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