dual N channel MOSFET HUASHUO HSM3206 featuring fast switching and RoHS compliance for power electronics design
Key Attributes
Model Number:
HSM3206
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
13A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6mΩ@4.5V,10A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
210pF@15V
Number:
2 N-Channel
Input Capacitance(Ciss):
2.295nF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
21nC@4.5V
Mfr. Part #:
HSM3206
Package:
SOP-8
Product Description
Product Overview
The HSM3206 is a dual N-channel, 30V fast switching MOSFET designed for high cell density trenched technology. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approved. Key benefits include super low gate charge and excellent CdV/dt effect decline, supported by advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: Dual N-Ch MOSFETs
- Technology: Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS guaranteed, full function reliability approved
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSM3206 | Drain-Source Voltage (VDS) | 30 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID@TA=25) | VGS @ 10V | 13 | A | |||
| Continuous Drain Current (ID@TA=70) | VGS @ 10V | 10 | A | |||
| Pulsed Drain Current (IDM) | 65 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 105.8 | mJ | ||||
| Avalanche Current (IAS) | 46 | A | ||||
| Total Power Dissipation (PD@TA=25) | 1.5 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-ambient (RJA) | --- | 85 | /W | |||
| Thermal Resistance Junction-Case (RJC) | --- | 25 | /W | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 30 | V | |||
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=10V , ID=12A | 6 | m | |||
| VGS=4.5V , ID=10A | 10 | m | ||||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | 2.5 | V | ||
| Drain-Source Leakage Current (IDSS) | VDS=24V , VGS=0V , TJ=25 | 1 | uA | |||
| VDS=24V , VGS=0V , TJ=55 | 5 | uA | ||||
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | 100 | nA | |||
| Forward Transconductance (gfs) | VDS=5V , ID=12A | 47 | S | |||
| Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | 1.7 | ||||
| Total Gate Charge (Qg) (4.5V) | VDS=15V , VGS=4.5V , ID=10A | 21 | nC | |||
| Gate-Source Charge (Qgs) | 7 | |||||
| Gate-Drain Charge (Qgd) | 6.9 | |||||
| Turn-On Delay Time (Td(on)) | VDD=15V , VGS=10V , RG=3.3 ID=10A | 9.6 | ns | |||
| Rise Time (Tr) | 8.6 | |||||
| Turn-Off Delay Time (Td(off)) | 59 | |||||
| Fall Time (Tf) | 15.6 | |||||
| Input Capacitance (Ciss) | VDS=15V , VGS=0V , f=1MHz | 2295 | pF | |||
| Output Capacitance (Coss) | 267 | |||||
| Reverse Transfer Capacitance (Crss) | 210 | |||||
| Continuous Source Current (IS) | VG=VD=0V , Force Current | 5 | A | |||
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | 1.2 | V | |||
| Reverse Recovery Time (trr) | IF=10A , dI/dt=100A/s , TJ=25 | 12 | nS | |||
| Reverse Recovery Charge (Qrr) | 4.8 | nC |
| Part Number | Package | Packaging |
|---|---|---|
| HSM3206 | SOP-8 | 2500/Tape&Reel |
2409291036_HUASHUO-HSM3206_C508459.pdf
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