High cell density trenched N channel MOSFET HSK5N04 ideal for synchronous buck converter applications
Key Attributes
Model Number:
HSK5N04
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
38pF
Number:
1 N-channel
Output Capacitance(Coss):
51pF
Input Capacitance(Ciss):
452pF
Pd - Power Dissipation:
1.7W
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
HSK5N04
Package:
SOT-89
Product Description
Product Overview
The HSK5N04 is a high cell density trenched N-channel MOSFET offering excellent RDS(ON) and gate charge, making it ideal for most synchronous buck converter applications. These fast-switching MOSFETs meet RoHS and Green Product requirements, are 100% EAS guaranteed, and have full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.Product Attributes
- Brand: HS-Semi
- Green Device Available
- RoHS Compliant
Technical Specifications
| Model | Type | Voltage (VDS) | Current (ID) | RDS(ON) (m) | Package | Ordering Information |
|---|---|---|---|---|---|---|
| HSK5N04 | N-Ch | 40 | 5A (Continuous @ TA=25, VGS@10V) | 30 (Typ. @ VGS=10V, ID=4A) | SOT-89 | 1000/Tape&Reel |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | 40 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | 5 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | 4 | A | |||
| IDM | Pulsed Drain Current2 | 20 | A | |||
| PD@TA=25 | Total Power Dissipation4 | 1.7 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-ambient (Steady State)1 | 85 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 48 | /W | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 40 | V | ||
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25, ID=1mA | 0.032 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=4A | 30 | 45 | m | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=3A | 40 | 60 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 2.5 | V | |
| VGS(th) | VGS(th) Temperature Coefficient | -4.56 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=32V , VGS=0V , TJ=25 | 1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=32V , VGS=0V , TJ=55 | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| gfs | Forward Transconductance | VDS=5V , ID=4A | 15 | S | ||
| Qg | Total Gate Charge (4.5V) | VDS=15V , VGS=4.5V , ID=3A | 11 | nC | ||
| Qgs | Gate-Source Charge | 2.1 | nC | |||
| Qgd | Gate-Drain Charge | 2.4 | nC | |||
| td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3.3, ID=1A | 9 | ns | ||
| tr | Rise Time | 8.8 | ns | |||
| td(off) | Turn-Off Delay Time | 29 | ns | |||
| tf | Fall Time | 11 | ns | |||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 452 | pF | ||
| Coss | Output Capacitance | 51 | pF | |||
| Crss | Reverse Transfer Capacitance | 38 | pF | |||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | 5 | A | ||
| ISM | Pulsed Source Current2,5 | 20 | A | |||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | 1.2 | V |
Note: 1. Tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2. Tested by pulsed, pulse width 300s, duty cycle 2%. 3. Power dissipation is limited by 150 junction temperature. 4. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation. 5. Refer to the application note for details.
2410122027_HUASHUO-HSK5N04_C28314510.pdf
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