HL Haolin Elec HDF1060N diode ideal for freewheeling applications in low voltage motor drive systems
Product Overview
The HDF1060N is an ultra-fast recovery diode featuring advanced silicon epitaxial planar technology. It is meticulously designed with optimized process parameters and structural graphics to achieve a low forward voltage drop and extremely fast reverse recovery time. Key benefits include precise epitaxial doping control, an advanced planar junction termination protection structure, and platinum doping for minority carrier lifetime control, ensuring superior overall parameters, high durability, and reliability. This diode is ideal for output rectification stages in switching power supplies, uninterruptible power supplies, and DC-DC converters. It also serves as a freewheeling diode in low-voltage conversion and switched motor drive applications.
Product Attributes
- Brand: HDF
- Model Series: HDF1060N
Technical Specifications
| Parameter Name | Symbol | Range | Unit | Details |
|---|---|---|---|---|
| Reverse Repetitive Peak Voltage | VRRM | 650 | V | |
| Forward Average Rectified Current | IF(AV) | 10.0 | A | |
| Forward Peak Surge Current @ 8.3ms | IFSM | 120 | A | |
| Operating Junction Temperature Range | TJ | -50 to +150 | C | |
| Storage Temperature Range | Tstg | -50 to +150 | C | |
| Chip to Case Thermal Resistance | RJC | 2.0 | C/W | |
| Maximum Forward Voltage | VF | -- to 2.06 | V | IF=8.0 Amps, TC=25C |
| Maximum Reverse Leakage Current | IR | -- to 10.0 | A | Under DC working voltage, TC=25C |
| Maximum Reverse Recovery Time | trr | -- to 35 | ns | IF=0.5 Amp, IR=1.0 Amp, IREC=0.25 Amp |
Key Features
- 35ns Ultra-Fast Recovery Time
- Low Forward Voltage Drop
- Low Leakage Current
- 150C Operating Junction Temperature
2202031800_HL-Haolin-Elec-HDF1060N_C2149764.pdf
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