N Channel Fast Switching MOSFET HUASHUO HSX80N20 with Low Gate Charge and High Reliability Guarantee
Key Attributes
Model Number:
HSX80N20
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
20mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
7.49nF@50V
Pd - Power Dissipation:
370W
Gate Charge(Qg):
115nC@10V
Mfr. Part #:
HSX80N20
Package:
TO-247
Product Description
Product Overview
The HSX80N20 is a high-performance N-channel Fast Switching MOSFET featuring extreme high cell density. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.
Product Attributes
- Brand: HS (implied by "www.hs-semi.cn")
- Product Type: N-Channel MOSFET
- Switching Speed: Fast Switching
- Certifications: RoHS, Green Product
- Reliability: 100% EAS guaranteed, full function reliability approved
Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Model | HSX80N20 | |
| Channel Type | N-Ch | |
| Voltage Rating | 200 | V |
| Current Rating | 80 | A |
| Storage Temperature Range | -55 to 150 | |
| Gate-Source Voltage (typical) | 20 | V |
| Drain-Source On Resistance (typical) | 32 | m |
| Gate Charge (typical) | 20.3 | nC |
| Capacitance (typical) | 7490 | pF |
| Power Dissipation (typical) | 267 | W |
2410121656_HUASHUO-HSX80N20_C7543773.pdf
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