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quality Fast Switching N Channel MOSFET HUASHUO HSBB4752 Featuring Low RDS ON and Advanced Trench Technology factory
quality Fast Switching N Channel MOSFET HUASHUO HSBB4752 Featuring Low RDS ON and Advanced Trench Technology factory

Fast Switching N Channel MOSFET HUASHUO HSBB4752 Featuring Low RDS ON and Advanced Trench Technology

Key Attributes
Model Number: HSBB4752
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.9mΩ@4.5V,20A
Gate Threshold Voltage (Vgs(th)):
1.6V
Reverse Transfer Capacitance (Crss@Vds):
68pF@20V
Number:
1 N-channel
Pd - Power Dissipation:
63W
Input Capacitance(Ciss):
1.59nF@20V
Gate Charge(Qg):
24.8nC@4.5V
Mfr. Part #:
HSBB4752
Package:
PRPAK3x3-8L
Product Description

Product Overview

The HSBB4752 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge and excellent CdV/dt effect decline, enabled by advanced high cell density trench technology.

Product Attributes

  • Brand: HS-Semi
  • Product Type: N-Channel Fast Switching MOSFET
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed, Full function reliability approved
  • Technology: Advanced high cell density Trench technology

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 40 V
VGS Gate-Source Voltage ±20 V
ID@TC=25 Continuous Drain Current1 50 A
ID@TC=100 Continuous Drain Current1 39 A
IDM Pulsed Drain Current2 200 A
EAS Single Pulse Avalanche Energy3 48 mJ
IAS Avalanche Current 31 A
PD@TC=25 Total Power Dissipation4 63 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-ambient (Steady State)1 --- 55 /W
RJC Thermal Resistance Junction-Case1 --- 2 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 40 --- --- V
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=20A 3.2 3.9 m
VGS=4.5V , ID=20A 4.6 6 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 1.6 2.3 V
IDSS Drain-Source Leakage Current VDS=32V , VGS=0V , TJ=25 --- 1 uA
VDS=32V , VGS=0V , TJ=55 --- 5 uA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- ±100 nA
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz 1.5 ---
Qg Total Gate Charge VDS=20V , VGS=4.5V , ID=20A 24.8 --- nC
Qgs Gate-Source Charge 6.3 --- nC
Qgd Gate-Drain Charge 2.2 --- nC
Td(on) Turn-On Delay Time VDD=20V , VGS=10V , RG=3 ID=20A 14.3 --- ns
Tr Rise Time 5.6 --- ns
Td(off) Turn-Off Delay Time 20 --- ns
Tf Fall Time 11 --- ns
Ciss Input Capacitance VDS=20V , VGS=0V , f=1MHz 1590 --- pF
Coss Output Capacitance 493 --- pF
Crss Reverse Transfer Capacitance 68 --- pF
Diode Characteristics
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- 50 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25 --- 1 V

Notes:

  • 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
  • 2. The data tested by pulsed, pulse width ≤ 300μs, duty cycle ≤ 2%.
  • 3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=31A.
  • 4. The power dissipation is limited by 150 junction temperature.
  • 5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
Part Number Package code Packaging
HSBB4752 PRPAK3*3 3000/Tape&Reel

2410121503_HUASHUO-HSBB4752_C5128199.pdf
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