20V P channel MOSFET HUASHUO HSW3415 featuring trench technology low gate charge and fast switching for power supplies
Key Attributes
Model Number:
HSW3415
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
35mΩ@4.5V,5A
Gate Threshold Voltage (Vgs(th)):
900mV
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
1 P-Channel
Input Capacitance(Ciss):
755pF
Output Capacitance(Coss):
113pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
8.4nC@4.5V
Mfr. Part #:
HSW3415
Package:
SOT-23-6L
Product Description
Product Overview
The HSW3415 is a P-channel, 20V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, advanced high cell density trench technology, and 2.5KV ESD protection.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Voltage Rating: 20V
- Switching Speed: Fast Switching
- Technology: Trench
- Certifications: RoHS, Green Product
- ESD Protection: 2.5KV
- Package: SOT23-6L
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -20 | V | |||
| VGS | Gate-Source Voltage | 8 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -4.5V1 | -5 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ -4.5V1 | -3.9 | A | |||
| IDM | Pulsed Drain Current2 | -20 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1.4 | W | |||
| PD@TA=70 | Total Power Dissipation3 | 0.84 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 100 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -20 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | --- | -0.014 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-5A | --- | 29 | 35 | m |
| VGS=-2.5V , ID=-3A | --- | 37 | 45 | V | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.4 | -0.6 | -0.9 | V |
| VGS(th)/TJ | VGS(th) Temperature Coefficient | --- | 3.95 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=-16V , VGS=0V , TJ=25 | --- | --- | -1 | uA |
| VDS=-16V , VGS=0V , TJ=55 | --- | --- | -5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=8V , VDS=0V | --- | --- | 100 | nA |
| gfs | Forward Transconductance | VDS=-5V , ID=-3A | --- | 12.8 | --- | S |
| Qg | Total Gate Charge (-4.5V) | VDS=-15V , VGS=-4.5V , ID=-3A | --- | 8.4 | 11 | nC |
| Qgs | Gate-Source Charge | --- | 2.4 | Qg | ||
| Qgd | Gate-Drain Charge | --- | 1.5 | |||
| td(on) | Turn-On Delay Time | VDD=-10V , VGS=-4.5V , RG=3.3, ID=-3A | --- | 12 | --- | ns |
| tr | Rise Time | --- | 9 | --- | ||
| td(off) | Turn-Off Delay Time | --- | 19 | --- | ||
| tf | Fall Time | --- | 29 | --- | ||
| Ciss | Input Capacitance | VDS=-10V , VGS=0V , f=1MHz | --- | 755 | pF | |
| Coss | Output Capacitance | --- | 113 | |||
| Crss | Reverse Transfer Capacitance | --- | 80 | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | --- | --- | -5 | A |
| ISM | Pulsed Source Current2,4 | --- | --- | -20 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | --- | -1.2 | V |
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300us, duty cycle 2%.
3. The power dissipation is limited by 150 junction temperature.
4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSW3415 | SOT23-6L | 3000/Tape&Reel |
2410121631_HUASHUO-HSW3415_C845596.pdf
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