Power Management with HUASHUO HSU3016 N Channel Fast Switching MOSFET and Low Gate Charge Technology
Key Attributes
Model Number:
HSU3016
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
96A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
315pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
3.075nF@15V
Pd - Power Dissipation:
62W
Gate Charge(Qg):
31.6nC@4.5V
Mfr. Part #:
HSU3016
Package:
TO-252-2
Product Description
Product Overview
The HSU3016 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel Fast Switching MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full function reliability approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | 96 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | 68 | A | |||
| IDM | Pulsed Drain Current2 | 192 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 144.7 | mJ | |||
| IAS | Avalanche Current | 53.8 | A | |||
| PD@TA=25 | Total Power Dissipation4 | 62 | W | |||
| TSTG | Storage Temperature Range | -55 | 175 | |||
| TJ | Operating Junction Temperature Range | -55 | 175 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | 85 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 24 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | V | ||
| RDS(ON),max | Static Drain-Source On-Resistance2 | VGS=10V , ID=30A | 4 | m | ||
| RDS(ON),max | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=15A | 6 | m | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 2.5 | V | |
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | 1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=55 | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| Qg | Total Gate Charge (4.5V) | VDS=20V , VGS=4.5V , ID=12A | 31.6 | nC | ||
| Diode Characteristics | ||||||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | 1 | V | ||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | 96 | A | ||
| ISM | Pulsed Source Current2,5 | 192 | A | |||
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSU3016 | TO252-2 | 2500/Tape&Reel |
2410121525_HUASHUO-HSU3016_C701001.pdf
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