Trench Technology N Channel MOSFET HUASHUO HSS2302B with 20V Drain Source Voltage and Fast Switching
Key Attributes
Model Number:
HSS2302B
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
46mΩ@2.5V,1A
Gate Threshold Voltage (Vgs(th)):
500mV
Reverse Transfer Capacitance (Crss@Vds):
20pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
180pF@10V
Pd - Power Dissipation:
710mW
Gate Charge(Qg):
3.5nC@4.5V
Mfr. Part #:
HSS2302B
Package:
SOT-23
Product Description
HSS2302B N-Channel 20V Fast Switching MOSFETs
Product Overview
The HSS2302B is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in most low-power switching and load switch applications. It meets RoHS and Green Product requirements and offers super low gate charge and excellent Cdv/dt effect decline due to its advanced high cell density Trench technology. This MOSFET is ideal for applications requiring fast switching capabilities.Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| VDS (Drain-Source Voltage) | 20 | V | |||
| VGS (Gate-Source Voltage) | ±12 | V | |||
| ID@TA=25 (Continuous Drain Current, VGS @ 4.5V) | 3 | A | |||
| ID@TA=70 (Continuous Drain Current, VGS @ 4.5V) | 2.2 | A | |||
| IDM (Pulsed Drain Current) | 10 | A | |||
| PD@TA=25 (Total Power Dissipation) | 0.71 | W | |||
| TSTG (Storage Temperature Range) | -55 | 150 | |||
| TJ (Operating Junction Temperature Range) | -55 | 150 | |||
| Thermal Data | |||||
| RJA (Thermal Resistance Junction-ambient) | --- | 120 | /W | ||
| RJC (Thermal Resistance Junction-Case) | --- | 65 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | |||||
| BVDSS (Drain-Source Breakdown Voltage) | VGS=0V , ID=250uA | 20 | --- | --- | V |
| RDS(ON) (Static Drain-Source On-Resistance) | VGS=4.5V , ID=2.5A | 46 | 60 | m | |
| RDS(ON) (Static Drain-Source On-Resistance) | VGS=2.5V , ID=1A | 61 | 85 | m | |
| VGS(th) (Gate Threshold Voltage) | VGS=VDS , ID =250uA | 0.5 | 0.65 | 1.0 | V |
| IDSS (Drain-Source Leakage Current) | VDS=16V , VGS=0V , TJ=25 | --- | 1 | uA | |
| IDSS (Drain-Source Leakage Current) | VDS=16V , VGS=0V , TJ=55 | --- | 5 | uA | |
| IGSS (Gate-Source Leakage Current) | VGS=±12V , VDS=0V | --- | ±100 | nA | |
| gfs (Forward Transconductance) | VDS=5V , ID=2A | 5 | --- | S | |
| Qg (Total Gate Charge) | VDS=10V , VGS=4.5V , ID=2.5A | 3.5 | --- | nC | |
| Qgs (Gate-Source Charge) | 0.6 | --- | |||
| Qgd (Gate-Drain Charge) | 0.45 | --- | |||
| Td(on) (Turn-On Delay Time) | VDD=10V , VGS=4.5V , RG=6 , ID=2.5A | 8 | --- | ns | |
| Tr (Rise Time) | 7 | --- | ns | ||
| Td(off) (Turn-Off Delay Time) | 30 | --- | ns | ||
| Tf (Fall Time) | 7 | --- | ns | ||
| Ciss (Input Capacitance) | VDS=10V , VGS=0V , f=1MHz | 180 | --- | pF | |
| Coss (Output Capacitance) | 39 | --- | pF | ||
| Crss (Reverse Transfer Capacitance) | 20 | --- | pF | ||
| Diode Characteristics | |||||
| IS (Continuous Source Current) | VG=VD=0V , Force Current | --- | 3 | A | |
| VSD (Diode Forward Voltage) | VGS=0V , IS=1A , TJ=25 | --- | 1.2 | V | |
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSS2302B | SOT-23 | 3000/Tape&Reel |
2410121641_HUASHUO-HSS2302B_C518782.pdf
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