Fast Switching N Channel MOSFET HUASHUO HSBB4052 with Advanced Trench Technology and RoHS Compliance
Key Attributes
Model Number:
HSBB4052
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
43A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.9mΩ@4.5V,10A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
38pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
690pF@15V
Pd - Power Dissipation:
27.8W
Gate Charge(Qg):
5.8nC@4.5V
Mfr. Part #:
HSBB4052
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB4052 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approved. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel Fast Switching MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 40 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current1 | 43 | A | |||
| ID@TC=100 | Continuous Drain Current1 | 28 | A | |||
| IDM | Pulsed Drain Current2 | 60 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 48 | mJ | |||
| IAS | Avalanche Current | 31 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 27.8 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient (Steady State)1 | --- | --- | 60 | /W | |
| RJC | Thermal Resistance Junction-Case1 | --- | --- | 4.5 | /W | |
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 40 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=12A | --- | 6.9 | 8.5 | m |
| VGS=4.5V , ID=10A | --- | 10.5 | 15 | m | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=32V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=32V , VGS=0V , TJ=55 | --- | --- | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.7 | --- | |
| Qg | Total Gate Charge (4.5V) | VDS=20V , VGS=4.5V , ID=12A | --- | 5.8 | --- | nC |
| Qgs | Gate-Source Charge | --- | 3 | --- | nC | |
| Qgd | Gate-Drain Charge | --- | 1.2 | --- | nC | |
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3.3, ID=1A | --- | 14.3 | --- | ns |
| Tr | Rise Time | --- | 5.6 | --- | ns | |
| Td(off) | Turn-Off Delay Time | --- | 20 | --- | ns | |
| Tf | Fall Time | --- | 11 | --- | ns | |
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 690 | --- | pF |
| Coss | Output Capacitance | --- | 193 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 38 | --- | pF | |
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | 20 | A |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | --- | 1 | V |
Notes:
1 Tested on a 1 inch² FR-4 board with 2OZ copper.
2 Tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3 EAS rating is maximum. Test condition: VDD=25V, VGS=10V, L=0.1mH, IAS=31A.
4 Power dissipation is limited by 150 junction temperature.
5 Theoretically same as ID and IDM, but in real applications, should be limited by total power dissipation.
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSBB4052 | PRPAK3*3 | 3000/Tape&Reel |
2410121503_HUASHUO-HSBB4052_C508823.pdf
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