Schottky diode HT Shenzhen Jinyu Semicon MBR10100LDCT with common cathode and overvoltage guard ring
Key Attributes
Model Number:
MBR10100LDCT
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
152A
Reverse Leakage Current (Ir):
10uA@100V
Voltage - DC Reverse (Vr) (Max):
100V
Voltage - Forward(Vf@If):
750mV@5A
Current - Rectified:
10A
Mfr. Part #:
MBR10100LDCT
Package:
TO-252
Product Description
Product Overview
The MBR10100L series are common cathode Schottky barrier diodes designed for high-frequency switch power supply, free-wheeling, and polarity protection applications. They feature a common cathode structure, low power loss, high efficiency, high operating junction temperature, and a guard ring for overvoltage protection, ensuring high reliability. These RoHS compliant products are suitable for various power electronics applications.
Product Attributes
- Brand: semiconductor JinYu
- Certifications: RoHS product
Technical Specifications
| Model | VRRM (V) | VDC (V) | IF(AV) (A) | IFSM (A) | Tj (C) | TSTG (C) | Rth(j-c) (C/W) | IR (A) | VF (V) | Package |
| MBR10100LDCT, MBR10100LY CT, MBR10100LFCT, MBR10100LCT | 100 | 100 | 10 (TC=150 TO-220/263/TO-252), 5 (TC=125 TO-220F) | 152 | 1 | -40~+150 | 2.0 (TO-220), 2.0 (TO-263), 2.0 (TO-252), 4.0 (TO-220F) | 10 (VR=VRRM, Tj=25) | 0.67 (IF=5A, Tj=25) | TO-220, TO-220F, TO-252, TO-263 |
2507241130_HT-Shenzhen-Jinyu-Semicon-MBR10100LDCT_C49384211.pdf
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