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quality High cell density trenched MOSFET HUASHUO HSU5N20 designed for switching and load switch applications factory
quality High cell density trenched MOSFET HUASHUO HSU5N20 designed for switching and load switch applications factory

High cell density trenched MOSFET HUASHUO HSU5N20 designed for switching and load switch applications

Key Attributes
Model Number: HSU5N20
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
4.5pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
900pF@25V
Pd - Power Dissipation:
2.7W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
HSU5N20
Package:
TO-252
Product Description

Product Overview

The HSU5N20 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements and has undergone full function reliability approval. Key features include a super low gate charge and excellent Cdv/dt effect decline, enabled by advanced high cell density trench technology.

Product Attributes

  • Brand: HS-Semi
  • Product Line: HSU5N20
  • Technology: Trench MOSFET
  • Environmental Compliance: RoHS, Green Product
  • Package Type: TO-252

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Units
VDS Drain-Source Voltage 200 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V 5 A
ID@TC=70 Continuous Drain Current, VGS @ 10V 3 A
IDM Pulsed Drain Current 8 A
PD@TA=25 Total Power Dissipation 2.7 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
RJA Thermal Resistance Junction-ambient 55 /W
RJC Thermal Resistance Junction-Case 2 /W
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 200 V
RDS(ON),typ Static Drain-Source On-Resistance VGS=10V , ID=1A 0.5 0.8
RDS(ON),typ Static Drain-Source On-Resistance VGS=4.5V , ID=1A 0.53 0.9
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 2 3 V
IDSS Drain-Source Leakage Current VDS=200V , VGS=0V , TJ=25 1 uA
IDSS Drain-Source Leakage Current VDS=200V , VGS=0V , TJ=55 5 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V 100 nA
Qg Total Gate Charge (10V) VDS=160V , VGS=10V , ID=1A 15 nC
Qgs Gate-Source Charge 2.9
Qgd Gate-Drain Charge 5
Td(on) Turn-On Delay Time VDD=100V , VGS=10V , RG=3 ID=1A 22 ns
Tr Rise Time 30 ns
Td(off) Turn-Off Delay Time 44 ns
Tf Fall Time 12 ns
Ciss Input Capacitance VDS=25V , VGS=0V , f=1MHz 900 pF
Coss Output Capacitance 125 pF
Crss Reverse Transfer Capacitance 4.5 pF
IS Continuous Source Current VG=VD=0V , Force Current 5 A
VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25 1 V
trr Reverse Recovery Time IF=1A , dI/dt=100A/s , TJ=25 85 ns
Qrr Reverse Recovery Charge 250 nC

Ordering Information

Part Number Package Code Packaging
HSU5N20 TO-252 2500/Tape&Reel

2410121435_HUASHUO-HSU5N20_C7543707.pdf

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