TO-92 package thyristor HTCSEMI HT03AM-12 designed for leakage protectors timers and gas igniters
Key Attributes
Model Number:
HT03AM-12
Product Custom Attributes
Holding Current (Ih):
1.5mA
Current - Gate Trigger(Igt):
100uA
Voltage - On State(Vtm):
1.8V
Average Gate Power Dissipation (PG(AV)):
100mW
Current - On State(It(RMS)):
470mA
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
20A@60Hz
SCR Type:
1 SCR
Gate Trigger Voltage (Vgt):
800mV
Operating Temperature:
-40℃~+110℃@(Tj)
Mfr. Part #:
HT03AM-12
Package:
TO-92-3
Product Description
PRSS0003EA-A Thyristor
The PRSS0003EA-A is a low-power thyristor in a TO-92 package, designed for applications such as leakage protectors, timers, and gas igniters. It features non-insulated and glass passivation construction.
Product Attributes
- Package Name: TO-92
- Mass (Typ.): 0.23 g
Technical Specifications
| Parameter | Symbol | Ratings | Unit | Conditions | ||
| Repetitive peak reverse voltage | VRRM | 600 | V | |||
| Non-repetitive peak reverse voltage | VRSM | 800 | V | |||
| DC reverse voltage | VR(DC) | 480 | V | |||
| Repetitive peak off-state voltage | VDRM | 600 | V | Note1 | ||
| Non-repetitive peak off-state voltage | VDSM | 800 | V | Note1 | ||
| DC off-state voltage | VD(DC) | 480 | V | Note1 | ||
| RMS on-state current | IT (RMS) | 0.47 | A | Commercial frequency, sine half wave 180 conduction, Ta = 47C | ||
| Average on-state current | IT (AV) | 0.3 | A | |||
| Surge on-state current | ITSM | 20 | A | 60Hz sine half wave 1 full cycle, peak value, non-repetitive | ||
| I2t for fusing | I2t | 1.6 | A2s | Value corresponding to 1 cycle of half wave 60Hz, surge on-state current | ||
| Peak gate power dissipation | PGM | 0.5 | W | |||
| Average gate power dissipation | PG (AV) | 0.1 | W | |||
| Peak gate forward voltage | VFGM | 6 | V | |||
| Peak gate reverse voltage | VRGM | 6 | V | |||
| Peak gate forward current | IFGM | 0.3 | A | |||
| Junction temperature | Tj | 40 to +110 | C | |||
| Storage temperature | Tstg | 40 to +125 | C | |||
| Repetitive peak reverse current | IRRM | 0.1 | mA | Tj = 110C, VRRM applied | ||
| Repetitive peak off-state current | IDRM | 0.1 | mA | Tj = 110C, VDRM applied, RGK = 1 k | ||
| On-state voltage | VTM | 1.8 | V | Ta = 25C, ITM = 4 A, instantaneous value | ||
| Gate trigger voltage | VGT | 0.8 | V | Tj = 25C, VD = 6 V, IT = 0.1 ANote3 | ||
| Gate non-trigger voltage | VGD | 0.2 | V | Tj = 110C, VD = 1/2 VDRM, RGK = 1 k | ||
| Gate trigger current | IGT | 1 | 100Note2 | A | Tj = 25C, VD = 6 V, IT = 0.1 ANote3 | |
| Holding current | IH | 1.5 | 3 | mA | Tj = 25C, VD = 12 V, RGK = 1 k | |
| Thermal resistance | Rth (j-a) | 180 | C/W | Junction to ambient |
Notes: 1. With gate to cathode resistance RGK = 1 k. 2. If special values of IGT are required, choose item D or E from those listed in the table below if possible. Item A B C D E IGT (A) 1 to 30 20 to 50 40 to 100 1 to 50 20 to 100 The above values do not include the current flowing through the 1 k resistance between the gate and cathode. 3 IGT, VGT measurement circuit.
2410121251_HTCSEMI-HT03AM-12_C2834476.pdf
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