Low Gate Charge N Channel MOSFET HUAKE HSD60N10 100V Suitable for Active Power Factor Correction
Key Attributes
Model Number:
HSD60N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
60A
RDS(on):
12mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
62pF
Number:
1 N-channel
Output Capacitance(Coss):
795pF
Pd - Power Dissipation:
91W
Input Capacitance(Ciss):
2.2nF
Gate Charge(Qg):
36.6nC@10V
Mfr. Part #:
HSD60N10
Package:
TO-252
Product Description
Product Overview
The HSD60N10 is a 100V N-Channel MOSFET from HUAKE Semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It features a low gate charge, low Crss, 100% avalanche testing, fast switching, and improved dv/dt capability, offering excellent performance with an RDS(on) of 8.5m (Typ) at VGS=10V.
Product Attributes
- Brand: HUAKE Semiconductors
- Product Type: N-Channel MOSFET
- Model: HSD60N10
- Voltage Rating: 100V
- Package: TO-252
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 100 | V | |||
| ID | Drain Current - Continuous | (Tc=25C) | 60* | A | ||
| (Tc=100C) | 37.9* | A | ||||
| IDM | Drain Current - Pulsed | 240* | A | |||
| VGSS | Gate-Source Voltage | 20 | V | |||
| EAS | Single Pulsed Avalanche Energy (Limit Reference Value) (Note5) | 175 | mJ | |||
| PD | Power Dissipation | (TC =25C) | 91 | W | ||
| Derate above 25C | 0.73 | W/C | ||||
| Tj | Operating Junction Temperature | 150 | C | |||
| Tstg | Storage Temperature Range | -55 | +150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case (Note2) | 1.37 | C/W | |||
| Electrical Characteristics (Tc=25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-source Breakdown Voltage | VGS=0V ,ID=250A | 100 | -- | -- | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=100V,VGS=0V | -- | -- | 1 | A |
| IGSSF | Gate-Body Leakage Current, Forward | VGS=+20V, VDS=0V | -- | -- | 100 | nA |
| IGSSR | Gate-Body Leakage Current, Reverse | VGS=-20V, VDS=0V | -- | -- | -100 | nA |
| On Characteristics (Note3) | ||||||
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID=250A | 1.2 | 2.0 | 2.8 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS=10V, ID=30A | -- | 8.5 | 12 | m |
| VGS=6V, ID=30A | -- | 10.5 | 15 | m | ||
| Dynamic Characteristics (Note4) | ||||||
| Ciss | Input Capacitance | VDS=25V,VGS=0V, f=1.0MHz | -- | 2200 | -- | pF |
| Coss | Output Capacitance | -- | 795 | -- | pF | |
| Crss | Reverse Transfer Capacitance | -- | 62 | -- | pF | |
| Switching Characteristics (Note4) | ||||||
| td(on) | Turn-On Delay Time | VDD = 50 V, ID =30 A, RG =2.5 , VGS=10V | -- | 18.8 | -- | ns |
| tr | Turn-On Rise Time | -- | 91 | -- | ns | |
| td(off) | Turn-Off Delay Time | -- | 28.5 | -- | ns | |
| tf | Turn-Off Fall Time | -- | 20.7 | -- | ns | |
| Qg | Total Gate Charge | VDS = 80 V, ID =30A, VGS = 10 V | -- | 36.6 | -- | nC |
| Qgs | Gate-Source Charge | -- | 9.7 | -- | nC | |
| Qgd | Gate-Drain Charge | -- | 8.5 | -- | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain-Source Diode Forward Current (Note2) | -- | -- | 60 | A | |
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | -- | -- | 240 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS =0V,IS=30A (Note3) | -- | -- | 1.3 | V |
| trr | Reverse Recovery Time | VGS =0V, IS=30A, d IF /dt=100A/s (Note3) | -- | 49 | -- | ns |
| Qrr | Reverse Recovery Charge | -- | 53 | -- | nC | |
2410121937_HUAKE-HSD60N10_C19725802.pdf
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