Trenched n channel mosfet HUASHUO HSP6040 featuring high cell density and excellent cdv dt effect decline
Key Attributes
Model Number:
HSP6040
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
140A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.2mΩ@10V,18A
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
245pF
Number:
1 N-channel
Input Capacitance(Ciss):
4.706nF
Output Capacitance(Coss):
325pF
Pd - Power Dissipation:
166W
Gate Charge(Qg):
75nC@10V
Mfr. Part #:
HSP6040
Package:
TO-220
Product Description
Product Overview
The HSP6040 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent Rds(on) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approved. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.Product Attributes
- Brand: HS-Semi
- Product Type: N-Ch Fast Switching MOSFETs
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units | |
|---|---|---|---|---|---|---|---|
| HSP6040 | Drain-Source Voltage (VDS) | 60 | V | ||||
| Gate-Source Voltage (VGS) | ±20 | V | |||||
| Continuous Drain Current (ID@TC=25) | VGS @ 10V | 140 | A | ||||
| Continuous Drain Current (ID@TC=100) | VGS @ 10V | 90 | A | ||||
| Pulsed Drain Current (IDM) | 300 | A | |||||
| Single Pulse Avalanche Energy (EAS) | 125 | mJ | |||||
| Avalanche Current (IAS) | 50 | A | |||||
| Total Power Dissipation (PD@TC=25) | 166 | W | |||||
| Storage Temperature Range (TSTG) | -55 | 150 | |||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | |||||
| Thermal Resistance Junction-Ambient (RJA) | --- | --- | 62 | /W | |||
| Thermal Resistance Junction-Case (RJC) | --- | --- | 0.75 | /W | |||
| HSP6040 | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 60 | --- | --- | V | |
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=10V , ID=18A | --- | 4.3 | 5.2 | m | ||
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=4.5V , ID=10A | --- | 6 | 7 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | --- | 2.5 | V | ||
| Drain-Source Leakage Current (IDSS) | VDS=48V , VGS=0V , TJ=25 | --- | --- | 1 | uA | ||
| Drain-Source Leakage Current (IDSS) | VDS=48V , VGS=0V , TJ=55 | --- | --- | 5 | uA | ||
| Gate-Source Leakage Current (IGSS) | VGS=±20V , VDS=0V | --- | --- | ±100 | nA | ||
| Forward Transconductance (gfs) | VDS=10V , ID=30A | --- | 75 | --- | S | ||
| Total Gate Charge (Qg) | VDS=48V , VGS=10V , ID=18A | --- | 75 | --- | nC | ||
| Gate-Source Charge (Qgs) | --- | 15.5 | --- | ||||
| Gate-Drain Charge (Qgd) | --- | 20.3 | --- | ||||
| Turn-On Delay Time (Td(on)) | VDD=30V , VGS=10V , RG=3.3, ID=18A | --- | 18.5 | --- | ns | ||
| Rise Time (Tr) | --- | 8.8 | --- | ns | |||
| Turn-Off Delay Time (Td(off)) | --- | 58.8 | --- | ns | |||
| Fall Time (Tf) | --- | 15.8 | --- | ns | |||
| HSP6040 | Continuous Source Current (IS) | VG=VD=0V , Force Current | --- | --- | 140 | A | |
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | --- | --- | 1.2 | V | ||
| Reverse Recovery Time (trr) | IF=18A , di/dt=100A/µs , TJ=25 | --- | 22.9 | --- | nS |
2410121456_HUASHUO-HSP6040_C845618.pdf
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