HUAKE SMT10N60 N Channel MOSFET 600V voltage rating low Crss and avalanche tested for switching performance
Key Attributes
Model Number:
SMT10N60
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
950mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
20pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.132nF@25V
Pd - Power Dissipation:
140W
Gate Charge(Qg):
19.4nC@10V
Mfr. Part #:
SMT10N60
Package:
TO-220F-3
Product Description
Product Overview
The SMT10N60 is a 600V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching applications. Key features include low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it suitable for high-frequency switching mode power supplies and active power factor correction.
Product Attributes
- Brand: HUAKE semiconductors
- Model: SMT10N60
- Type: N-Channel MOSFET
- Voltage Rating: 600V
- Release Date: 2017.08
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Off Characteristics | BVDSS | VGS=0V ,ID=250A | 600 | -- | -- | V |
| BVDSS /TJ | ID=250A (Referenced to 25C) | -- | 0.7 | -- | V/C | |
| IDSS | VDS=600V,VGS=0V | -- | -- | 1 | A | |
| IDSS | VDS=480V,Tc=125C | -- | -- | 10 | A | |
| IGSSF | VGS=+30V, VDS=0V | -- | -- | 100 | nA | |
| IGSSR | VGS=-30V, VDS=0V | -- | -- | -100 | nA | |
| On Characteristics | VGS(th) | VDS= VGS, ID=250A | 2.0 | -- | 4.0 | V |
| RDS(on) | VGS=10 V, ID=5.0A | -- | 0.7 | 0.95 | ||
| Forward Transconductance | gFS | VDS=40 V, ID=5.0A (Note4) | -- | 6.2 | -- | S |
| Dynamic Characteristics | Ciss | VDS=25V,VGS=0V, f=1.0MHz | -- | 1132 | -- | pF |
| Coss | VDS=25V,VGS=0V, f=1.0MHz | -- | 135 | -- | pF | |
| Crss | VDS=25V,VGS=0V, f=1.0MHz | -- | 20 | -- | pF | |
| Switching Characteristics | td(on) | VDD = 300 V, ID = 10 A, RG = 25 (Note4,5) | -- | 33 | -- | ns |
| tr | VDD = 300 V, ID = 10 A, RG = 25 (Note4,5) | -- | 60 | -- | ns | |
| td(off) | VDD = 300 V, ID = 10 A, RG = 25 (Note4,5) | -- | 59 | -- | ns | |
| tf | VDD = 300 V, ID = 10 A, RG = 25 (Note4,5) | -- | 39 | -- | ns | |
| Gate Charge | Qg | VDS = 480 V, ID =10 A, VGS = 10 V (Note4,5) | -- | 19.4 | -- | nC |
| Qgs | VDS = 480 V, ID =10 A, VGS = 10 V (Note4,5) | -- | 6.26 | -- | nC | |
| Qgd | VDS = 480 V, ID =10 A, VGS = 10 V (Note4,5) | -- | 6.55 | -- | nC | |
| Drain-Source Diode Characteristics | IS | -- | -- | -- | 10 | A |
| ISM | -- | -- | -- | 40 | A | |
| VSD | VGS =0V,IS=10.0A | -- | -- | 1.3 | V | |
| Diode Switching Characteristics | trr | VGS =0V, IS=10.0A, d IF /dt=100A/s (Note4) | -- | 425 | -- | ns |
| Qrr | VGS =0V, IS=10.0A, d IF /dt=100A/s (Note4) | -- | 4.31 | -- | C | |
| Absolute Maximum Ratings | VDSS | -- | -- | -- | 600 | V |
| ID | Tc=25C | -- | -- | 10.0* | A | |
| ID | Tc=100C | -- | -- | 6.0* | A | |
| IDM | Pulsed (Note1) | -- | -- | 40* | A | |
| VGSS | -- | -- | 30 | V | ||
| EAS | Single Pulsed Avalanche Energy (Note2) | -- | -- | 713 | mJ | |
| Thermal Characteristics | RJC | Thermal Resistance,Junction to Case | -- | -- | 0.89 | C /W |
| RJA | Thermal Resistance,Junction to Ambient | -- | -- | 62.5 | C /W | |
| PD | Power Dissipation(TC =25C) | -- | -- | 140 | W | |
| PD Derate | Derate above 25C | -- | 1.12 | -- | W/C | |
| Tj | Operating Junction Temperature | -- | -- | 150 | C | |
| Storage Temperature | Tstg | -- | -55 | -- | +150 | C |
2410122013_HUAKE-SMT10N60_C570143.pdf
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