Complementary MOSFET pair HUASHUO HSW4602 with advanced trench technology and switching performance
Key Attributes
Model Number:
HSW4602
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.5A;3.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
24mΩ@10V;56mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V;1.4V
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
73pF;53pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
96pF;66pF
Input Capacitance(Ciss):
402pF;490pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
8.4nC@10V;9.8nC@10V
Mfr. Part #:
HSW4602
Package:
SOT-23-6
Product Description
Product Overview
The HSW4602 is a high-performance complementary N-channel and P-channel MOSFET pair featuring high cell density for excellent RDS(ON) and gate charge characteristics. Designed for synchronous buck converter applications, these MOSFETs offer fast switching capabilities. The HSW4602 series meets RoHS and Green Product requirements and is 100% EAS guaranteed with full functional reliability approval. Key advantages include 100% EAS Guaranteed, Green Device availability, super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Certifications: RoHS, Green Product, 100% EAS Guaranteed
- Technology: Advanced high cell density Trench technology
Technical Specifications
| Part Number | Channel Type | VDS (V) | RDS(ON) Max (m) | ID Max (A) | Package | Packaging |
|---|---|---|---|---|---|---|
| HSW4602 | N-Ch | 30 | 30 (VGS=10V, ID=4.5A) | 4.5 | SOT23-6 | 3000/Tape&Reel |
| HSW4602 | P-Ch | -30 | 70 (VGS=-10V, ID=-3.5A) | -3.5 | SOT23-6 | 3000/Tape&Reel |
N-Channel Electrical Characteristics (TJ=25 , unless otherwise noted)
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=4.5A | --- | 24 | 30 | m |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 1.5 | 3.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| Qg | Total Gate Charge (4.5V) | VDS=10V , VGS=10V , ID=1A | --- | 8.4 | --- | nC |
| Ciss | Input Capacitance | VDS=10V , VGS=0V , f=1MHz | --- | 402 | --- | pF |
| Coss | Output Capacitance | VDS=10V , VGS=0V , f=1MHz | --- | 96 | --- | pF |
| Crss | Reverse Transfer Capacitance | VDS=10V , VGS=0V , f=1MHz | --- | 73 | --- | pF |
P-Channel Electrical Characteristics (TJ=25 , unless otherwise noted)
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -30 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-10V , ID=-3.5A | --- | 56 | 70 | m |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -1.4 | -3.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| Qg | Total Gate Charge (-4.5V) | VDS=-15V , VGS=-10V , ID=-1A | --- | 9.8 | --- | nC |
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | --- | 490 | --- | pF |
| Coss | Output Capacitance | VDS=-15V , VGS=0V , f=1MHz | --- | 66 | --- | pF |
| Crss | Reverse Transfer Capacitance | VDS=-15V , VGS=0V , f=1MHz | --- | 53 | --- | pF |
Typical Characteristics
Refer to the following figures for typical characteristic curves:
- Fig.1 Typical Output Characteristics (N-Channel & P-Channel)
- Fig.2 On-Resistance v.s Gate-Source (N-Channel & P-Channel)
- Fig.3 Forward Characteristics Of Reverse (N-Channel & P-Channel)
- Fig.4 Gate-Charge Characteristics (N-Channel & P-Channel)
- Fig.5 Normalized VGS(th) v.s TJ (N-Channel & P-Channel)
- Fig.6 Normalized RDSON v.s TJ (N-Channel & P-Channel)
- Fig.7 Capacitance (N-Channel & P-Channel)
- Fig.8 Safe Operating Area (N-Channel & P-Channel)
- Fig.9 Normalized Maximum Transient Thermal Impedance (N-Channel & P-Channel)
- Fig.10 Switching Time Waveform (N-Channel & P-Channel)
- Fig.11 Unclamped Inductive Waveform (N-Channel & P-Channel)
Notes
- Data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
- Data tested by pulsed, pulse width 300s, duty cycle 2%.
- Power dissipation is limited by 150 junction temperature.
- The data for PD is theoretically the same as ID and IDM, but in real applications, should be limited by total power dissipation.
2410121517_HUASHUO-HSW4602_C700963.pdf
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