650V N Channel Super Junction Power MOSFET with Low Gate Charge and Improved dvdt HUAKE HCD65R280-S2
Key Attributes
Model Number:
HCD65R280-S2
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
15A
RDS(on):
240mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1pF
Number:
1 N-channel
Output Capacitance(Coss):
41pF
Pd - Power Dissipation:
115W
Input Capacitance(Ciss):
920pF
Gate Charge(Qg):
27nC@10V
Mfr. Part #:
HCD65R280-S2
Package:
TO-252
Product Description
Product Overview
The HCD65R280-S2 is a 650V N-Channel Super Junction Power MOSFET from HUAKE semiconductors. It offers a continuous drain current of 15.0A and a low on-resistance of 240m (typ.) at VGS=10V. Key features include low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability. This MOSFET is ideal for high-frequency switching mode power supplies and active power factor correction applications.
Product Attributes
- Brand: HUAKE semiconductors
- Product Series: HCD65R280-S2
- Channel Type: N-Channel
- Technology: Super Junction Power MOSFET
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 650 | V | |||
| Drain Current - Continuous (Tc=25C) | ID | 15.0* | A | |||
| Drain Current - Continuous (Tc=100C) | ID | 9.5* | A | |||
| Drain Current - Pulsed (Note1) | IDM | 60* | A | |||
| Gate-Source Voltage | VGSS | 30 | V | |||
| Single Pulsed Avalanche Energy (Limit Reference Value) (Note2) | EAS | 113 | mJ | |||
| Avalanche Current (Note1) | IAR | 3.0 | A | |||
| Peak Diode Recovery dv/dt (Note3) | dv/dt | 15 | V/ns | |||
| Power Dissipation (TC =25C) | PD | 115 | W | |||
| Derate above 25C | 0.92 | W/C | ||||
| Operating Junction Temperature | Tj | 150 | C | |||
| Storage Temperature Range | Tstg | -55 | +150 | C | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to Case | RJC | 1.09 | C/W | |||
| Thermal Resistance, Junction to Ambient | RJA | 69 | C/W | |||
| Electrical Characteristics (Tc=25C unless otherwise noted) | ||||||
| Drain-source Breakdown Voltage | BVDSS | VGS=0V ,ID=250A | 650 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=650V,VGS=0V | 1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=520V,Tc=125C | 10 | A | ||
| Gate-Body Leakage Current, Forward | IGSSF | VGS=+30V, VDS=0V | 100 | nA | ||
| Gate-Body Leakage Current, Reverse | IGSSR | VGS=-30V, VDS=0V | -100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 2.3 | 4.5 | V | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=10 V, ID=7.5A | 240 | 280 | m | |
| Forward Transconductance | gFS | VDS=20 V, ID=7.5A (Note4) | 8.2 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=100V,VGS=0V, f=1.0MHz | 920 | pF | ||
| Output Capacitance | Coss | 41 | pF | |||
| Reverse Transfer Capacitance | Crss | 1.0 | pF | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD = 325 V, ID =15.0 A, RG = 25 (Note4,5) | 19.5 | ns | ||
| Turn-On Rise Time | tr | 45 | ns | |||
| Turn-Off Delay Time | td(off) | 69 | ns | |||
| Turn-Off Fall Time | tf | 37 | ns | |||
| Total Gate Charge | Qg | VDS = 520 V, ID =15.0 A, VGS = 10 V (Note4,5) | 27 | nC | ||
| Gate-Source Charge | Qgs | 7.5 | nC | |||
| Gate-Drain Charge | Qgd | 12.3 | nC | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 15 | A | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 60 | A | |||
| Drain-Source Diode Forward Voltage | VSD | VGS =0V,IS=15.0A | 1.4 | V | ||
| Reverse Recovery Time | trr | VGS =0V, IS=15.0A, d IF /dt=100A/s (Note4) | 273 | ns | ||
| Reverse Recovery Charge | Qrr | 3.5 | C | |||
2507011715_HUAKE-HCD65R280-S2_C49274933.pdf
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