700V N Channel MOSFET HUAKE SMF7N70 engineered for switching in power supplies and correction circuits
Key Attributes
Model Number:
SMF7N70
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
7A
RDS(on):
1.6Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.11nF@25V
Pd - Power Dissipation:
48W
Gate Charge(Qg):
28.2nC@10V
Mfr. Part #:
SMF7N70
Package:
TO-220F
Product Description
SMF7N70 700V N-Channel MOSFET
The SMF7N70 is a 700V N-Channel MOSFET from HUAKE semiconductors designed for high-frequency switching mode power supplies and active power factor correction applications. It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, offering efficient and reliable performance.
Product Attributes
- Brand: HUAKE semiconductors
- Product Type: N-Channel MOSFET
- Chip Version: U
- Document Version: 1.0
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 700 | V | |||
| ID | Drain Current - Continuous | (Tc=25℃) | 7.0* | A | ||
| (Tc=100℃) | 4.43* | A | ||||
| IDM | Drain Current - Pulsed (Note1) | 28* | A | |||
| VGSS | Gate-Source Voltage | ±30 | V | |||
| EAS | Single Pulsed Avalanche Energy (Limit Reference Value) (Note2) | 431 | mJ | |||
| IAR | Avalanche Current (Note1) | 7.0 | A | |||
| EAR | Repetitive Avalanche Energy (Note1) | 12.5 | mJ | |||
| dv/dt | Peak Diode Recovery dv/dt (Note3) | 4.5 | V/ns | |||
| PD | Power Dissipation | (TC =25℃) | 48 | W | ||
| -Derate above 25℃ | 0.38 | W/℃C | ||||
| Tj | Operating Junction Temperature | 150 | ℃C | |||
| Tstg | Storage Temperature Range | -55 | +150 | ℃C | ||
| Thermal Characteristics | ||||||
| RθJC | Thermal Resistance,Junction to Case | 2.6 | ℃/W | |||
| RθJA | Thermal Resistance,Junction to Ambient | 62.5 | ℃/W | |||
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-source Breakdown Voltage | VGS=0V ,ID=250μA | 700 | -- | -- | V |
| △BVDSS /△TJ | Breakdown Voltage Temperature Coefficient | ID=250μA (Referenced to 25℃) | -- | 0.72 | -- | V/℃C |
| IDSS | Zero Gate Voltage Drain Current | VDS=700V,VGS=0V | -- | -- | 1 | μA |
| VDS=560V,Tc=125℃ | -- | -- | 10 | μA | ||
| IGSSF | Gate-Body Leakage Current,Forward | VGS=+30V, VDS=0V | -- | -- | 100 | nA |
| VGS=-30V, VDS=0V | -- | -- | -100 | nA | ||
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID=250μA | 2.0 | -- | 4.0 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS=10 V, ID=3.5A | -- | 1.3 | 1.6 | Ω |
| gFS | Forward Transconductance | VDS=20 V, ID=3.5A (Note4) | -- | 5.8 | -- | S |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=25V,VGS=0V, f=1.0MHz | -- | 1110 | -- | pF |
| Coss | Output Capacitance | -- | 89 | -- | pF | |
| Crss | Reverse Transfer Capacitance | -- | 6 | -- | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 350 V, ID = 7.0 A, RG = 25 Ω (Note4,5) | -- | 11.3 | -- | ns |
| tr | Turn-On Rise Time | -- | 93.2 | -- | ns | |
| td(off) | Turn-Off Delay Time | -- | 120 | -- | ns | |
| tf | Turn-Off Fall Time | -- | 45.4 | -- | ns | |
| Gate Charge | Qg Total Gate Charge | VDS = 560 V, ID =7.0 A, VGS = 10 V (Note4,5) | -- | 28.2 | -- | nC |
| Qgs Gate-Source Charge | -- | 5.6 | -- | nC | ||
| Qgd Gate-Drain Charge | -- | 13.7 | -- | nC | ||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain-Source Diode Forward Current | -- | -- | 7.0 | A | |
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | -- | -- | 28 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS =0V,IS=7.0 A | -- | -- | 1.4 | V |
| trr | Reverse Recovery Time | VGS =0V, IS=7.0 A, d IF /dt=100A/μs (Note4) | -- | 313 | -- | ns |
| Qrr | Reverse Recovery Charge | -- | 2.42 | -- | μC | |
2410121937_HUAKE-SMF7N70_C19725785.pdf
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