P Channel 100V MOSFET HUASHUO HSP0139 Fast Switching Device with Low Gate Charge and RoHS Compliance
Key Attributes
Model Number:
HSP0139
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
35A
Operating Temperature -:
-55℃~+150℃
RDS(on):
55mΩ@4.5V,8A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
125pF@25V
Number:
1 P-Channel
Input Capacitance(Ciss):
6.516nF@25V
Pd - Power Dissipation:
104W
Gate Charge(Qg):
92nC@10V
Mfr. Part #:
HSP0139
Package:
TO-220
Product Description
Product Overview
The HSP0139 is a P-Channel 100V Fast Switching MOSFET designed with advanced trench MOSFET technology. It offers excellent RDS(ON) and gate charge characteristics, making it suitable for a wide variety of applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and boasts full function reliability approval. Key advantages include super low gate charge and excellent decline of CdV/dt effect, derived from its advanced high cell density trench technology.
Product Attributes
- Brand: HS-SMEI
- Product Type: P-Channel MOSFET
- Voltage Rating: 100V
- Switching Speed: Fast Switching
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -100 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1 | -35 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V1 | -23 | A | |||
| IDM | Pulsed Drain Current2 | -100 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 345 | mJ | |||
| IAS | Avalanche Current | 28 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 104 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 1.2 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -100 | --- | --- | V |
| RDS(ON),max | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-10A | --- | 42 | 50 | m |
| VGS=-4.5V , ID=-8A | --- | 46 | 55 | m | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.2 | -1.8 | -2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=-100V , VGS=0V , TJ=25 | --- | --- | -50 | uA |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| gfs | Forward Transconductance | VDS=-10V , ID=-10A | --- | 32 | --- | S |
| Qg | Total Gate Charge | VDS=-80V , VGS=-10V , ID=-14A | --- | 92 | --- | nC |
| Qgs | Gate-Source Charge | --- | 17.5 | --- | nC | |
| Qgd | Gate-Drain Charge | --- | 14 | --- | nC | |
| Td(on) | Turn-On Delay Time | VDD=-50V , VGS=-10V , RG=3.3, ID=-14A | --- | 20.5 | --- | ns |
| Tr | Rise Time | --- | 32.2 | --- | ns | |
| Td(off) | Turn-Off Delay Time | --- | 123 | --- | ns | |
| Tf | Fall Time | --- | 63.7 | --- | ns | |
| Ciss | Input Capacitance | VDS=-25V , VGS=0V , f=1MHz | --- | 6516 | --- | pF |
| Coss | Output Capacitance | --- | 223 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 125 | --- | pF | |
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | -35 | A |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | --- | 1.2 | V |
| trr | Reverse Recovery Time | IF=-14A , di/dt=-100A/s , TJ=25 | --- | 31.2 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 31.97 | --- | nC | |
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300s, duty cycle 2%.
3. The EAS data shows Max. rating. The test condition is VDD=-25V, VGS=-10V, L=0.88mH, IAS=-28A.
4. The power dissipation is limited by 150 junction temperature.
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121655_HUASHUO-HSP0139_C508809.pdf
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