Super Junction Power MOSFET 650V N Channel HUAKE HCH65R180 for High Frequency Switching Applications
HCH65R180 650V N-Channel Super Junction Power MOSFET
The HCH65R180 is a 650V N-Channel Super Junction Power MOSFET from HUAKE semiconductors, designed for high-frequency switching applications. It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it suitable for High Frequency Switching Mode Power Supplies and Active Power Factor Correction.
Product Attributes
- Brand: HUAKE semiconductors
- Product Series: HCH65R180
- Channel Type: N-Channel
- Technology: Super Junction Power MOSFET
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 650 | V | |||
| ID | Drain Current - Continuous (Tc=25C) | 20.0* | A | |||
| ID | Drain Current - Continuous (Tc=100C) | 12.6* | A | |||
| IDM | Drain Current - Pulsed (Note1) | 80* | A | |||
| VGSS | Gate-Source Voltage | 30 | V | |||
| EAS | Single Pulsed Avalanche Energy (Limit Reference Value) (Note2) | 550 | mJ | |||
| IAR | Avalanche Current (Note1) | 10.0 | A | |||
| EAR | Repetitive Avalanche Energy (Note1) | 7.5 | mJ | |||
| dv/dt | Peak Diode Recovery dv/dt (Note3) | 8.5 | V/ns | |||
| PD | Power Dissipation(TC =25C) | 185 | W | |||
| -Derate above 25C | 1.48 | W/C | ||||
| Tj | Operating Junction Temperature | 150 | C | |||
| Tstg | Storage Temperature Range | -55 | +150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 0.68 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 62.5 | C/W | |||
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-source Breakdown Voltage | VGS=0V ,ID=250A | 650 | -- | -- | V |
| BVDSS /TJ | Breakdown Voltage Temperature Coefficient | ID=250A (Referenced to 25C) | -- | 0.62 | -- | V/C |
| IDSS | Zero Gate Voltage Drain Current | VDS=650V,VGS=0V | -- | -- | 1 | A |
| VDS=520V,TC=125C | -- | -- | 10 | A | ||
| IGSSF | Gate-Body Leakage Current,Forward | VGS=+30V, VDS=0V | -- | -- | 100 | nA |
| IGSSR | Gate-Body Leakage Current,Reverse | VGS=-30V, VDS=0V | -- | -- | -100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID=250A | 2.0 | -- | 4.0 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS=10 V, ID=10A | -- | 180 | 210 | m |
| gFS | Forward Transconductance | VDS=20 V, ID=10A (Note4) | -- | 13.5 | -- | S |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=100V,VGS=0V, f=1.0MHz | -- | 1170 | -- | pF |
| Coss | Output Capacitance | -- | 67 | -- | pF | |
| Crss | Reverse Transfer Capacitance | -- | 4.0 | -- | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 325 V, ID = 20 A, RG = 25 (Note4,5) | -- | 20 | -- | ns |
| tr | Turn-On Rise Time | -- | 59 | -- | ns | |
| td(off) | Turn-Off Delay Time | -- | 105 | -- | ns | |
| tf | Turn-Off Fall Time | -- | 41 | -- | ns | |
| Qg | Total Gate Charge | VDS = 520 V, ID =20 A, VGS = 10 V (Note4,5) | -- | 39 | -- | nC |
| Qgs | Gate-Source Charge | -- | 9.5 | -- | nC | |
| Qgd | Gate-Drain Charge | -- | 19 | -- | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain-Source Diode Forward Current | -- | -- | 20 | A | |
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | -- | -- | 80 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS =0V,IS=20.0A | -- | -- | 1.4 | V |
| trr | Reverse Recovery Time | VGS =0V, IS=20.0A, d IF/dt=100A/s (Note4) | -- | 425 | -- | ns |
| Qrr | Reverse Recovery Charge | -- | 6.2 | -- | C | |
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature.
2. L = 10mH, IAS =10.0A, VDD = 100V, RG = 25 , Starting TJ = 25C.
3. ISD20.0A, di/dt200A/s, VDDBVDSS, Starting TJ = 25C.
4. Pulse Test : Pulse Width 300 s, Duty Cycle2%.
5. Essentially Independent of Operating Temperature.
Mechanical Data (TO-262)
| SYMBOL | min | nom | max | SYMBOL | min | nom | max |
|---|---|---|---|---|---|---|---|
| A | 4.32 | 4.52 | 4.72 | D1 | 7.40REF | ||
| A1 | 2.44 | 2.64 | 2.84 | E | 9.88 | 10.13 | 10.38 |
| b | 0.70 | 0.80 | 0.90 | E1 | 7.02 | 8.02 | 9.02 |
| b1 | 0.28 | 0.38 | 0.48 | e | 2.54REF | ||
| b2 | 0.90 | 1.00 | 1.10 | L | 12.60 | 13.10 | 13.60 |
| b3 | 1.18 | 1.28 | 1.38 | L1 | 1.30 | 1.50 | 1.70 |
| c | 0.30 | 0.38 | 0.46 | L2 | 2.90 | 3.20 | 3.50 |
| c1 | 1.17 | 1.27 | 1.37 | H | 1.08 | 1.28 | 1.48 |
| D | 8.70 | 9.05 | 9.40 | 1 | 2 | - | 7 |
(Precautions):
1. When designing circuits, do not exceed the maximum rated values of the device, otherwise it will affect the reliability of the whole machine.
2. MOSFET products are electrostatic sensitive devices. When using, pay attention to anti-static protection measures, such as wearing anti-static wristbands, grounding equipment, etc.
3. If a heatsink is to be installed, pay attention to controlling the torque and the flatness of the heatsink.
4. This specification is produced by HUAKE Company and may be changed irregularly without prior notice.
5. If you have any questions, please contact our sales representative in time.
(Version History):
1. : V1.0, : 2022-12-20, :
2410121937_HUAKE-HCH65R180_C19725818.pdf
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