Switching mode power supply N Channel MOSFET HUAKE SMF2N65 650V with low gate charge and fast switching
Key Attributes
Model Number:
SMF2N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.2Ω@10V,1A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
5pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
270pF@25V
Pd - Power Dissipation:
23W
Mfr. Part #:
SMF2N65
Package:
TO-220F
Product Description
Product Overview
The SMF2N65 is a 650V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction. It offers excellent performance with features such as low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it a reliable choice for demanding power applications.
Product Attributes
- Brand: HUAKE semiconductors
- Model: SMF2N65
- Product Type: N-Channel MOSFET
- Voltage Rating: 650V
- Date: 2017.08
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 650 | V | |||
| ID | Drain Current - Continuous (Tc=25C) | 2.0* | A | |||
| ID | Drain Current - Continuous (Tc=100C) | 1.3* | A | |||
| IDM | Drain Current - Pulsed (Note1) | 8* | A | |||
| VGSS | Gate-Source Voltage | 30 | V | |||
| EAS | Single Pulsed Avalanche Energy (Note2) | 120 | mJ | |||
| IAR | Avalanche Current (Note1) | 2.0 | A | |||
| EAR | Repetitive Avalanche Energy (Note1) | 4.4 | mJ | |||
| dv/dt | Peak Diode Recovery dv/dt (Note3) | 4.5 | V/ns | |||
| PD | Power Dissipation(TC =25C) | 23 | W | |||
| -Derate above 25C | 0.18 | W/C | ||||
| Tj | Operating Junction Temperature | 150 | C | |||
| Tstg | Storage Temperature Range | -55 | +150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 5.5 | C /W | |||
| RJA | Thermal Resistance, Junction to Ambient | 62.5 | C /W | |||
| Electrical Characteristics | ||||||
| BVDSS | Drain-source Breakdown Voltage | VGS=0V ,ID=250A | 650 | -- | -- | V |
| BVDSS/TJ | Breakdown Voltage Temperature Coefficient | ID=250A (Referenced to 25C) | -- | 0.65 | -- | V/C |
| IDSS | Zero Gate Voltage Drain Current | VDS=650V,VGS=0V | -- | -- | 1 | A |
| VDS=520V,TC=125C | -- | -- | 10 | A | ||
| IGSSF | Gate-Body Leakage Current,Forward | VGS=+30V, VDS=0V | -- | -- | 100 | nA |
| IGSSR | Gate-Body Leakage Current,Reverse | VGS=-30V, VDS=0V | -- | -- | -100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID=250A | 2.0 | -- | 4.0 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS=10 V, ID=1.0A | -- | 4.2 | 4.9 | |
| gFS | Forward Transconductance | VDS=40 V, ID=1.0A (Note4) | -- | 1.9 | -- | S |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=25V,VGS=0V, f=1.0MHz | -- | 270 | -- | pF |
| Coss | Output Capacitance | -- | 40 | -- | pF | |
| Crss | Reverse Transfer Capacitance | -- | 5 | -- | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 325 V, ID = 2.0 A, RG = 25 (Note4,5) | -- | 7 | -- | ns |
| tr | Turn-On Rise Time | -- | 23 | -- | ns | |
| td(off) | Turn-Off Delay Time | -- | 2 | -- | ns | |
| tf | Turn-Off Fall Time | -- | 24 | -- | ns | |
| Qg | Total Gate Charge | VDS = 520 V, ID =2.0 A, VGS = 10 V (Note4,5) | -- | 9 | -- | nC |
| Qgs | Gate-Source Charge | -- | 1.6 | -- | nC | |
| Qgd | Gate-Drain Charge | -- | 4.3 | -- | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain-Source Diode Forward Current | -- | -- | 2.0 | A | |
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | -- | -- | 8 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS =0V,IS=2.0A | -- | -- | 1.4 | V |
| trr | Reverse Recovery Time | VGS =0V, IS=2.0A, d IF/dt=100A/s (Note4) | -- | 230 | -- | ns |
| Qrr | Reverse Recovery Charge | -- | 1.0 | -- | C | |
2410122013_HUAKE-SMF2N65_C563581.pdf
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