Power Management N Channel MOSFET HUASHUO HSU6066 with Fast Switching and 60 Volt Drain Source Voltage
Key Attributes
Model Number:
HSU6066
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
72A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 N-channel
Output Capacitance(Coss):
1.67nF
Pd - Power Dissipation:
52W
Input Capacitance(Ciss):
1.67nF@30V
Gate Charge(Qg):
33nC@10V
Mfr. Part #:
HSU6066
Package:
TO-252
Product Description
Product Overview
The HSU6066 is an N-Channel Fast Switching MOSFET designed for various applications. It offers robust performance with a drain-source voltage of 60V and a continuous drain current of 72A. This device is engineered for fast switching capabilities, making it suitable for power management and switching circuits.
Product Attributes
- Brand: HS-Semi
- Model Series: HSU6066
- Channel Type: N-Channel
- Switching Type: Fast Switching
Technical Specifications
| Parameter | Value |
|---|---|
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) | 72 A |
| Storage Temperature Range | -55 to 150 |
| Typical Output Characteristics | Refer to Fig.1 |
| On-Resistance vs. Gate-Source Voltage | Refer to Fig.2 |
| Source-Drain Forward Characteristics | Refer to Fig.3 |
| Gate-Charge Characteristics | Refer to Fig.4 |
| Normalized VGS(th) vs. TJ | Refer to Fig.5 |
| Normalized RDSON vs. TJ | Refer to Fig.6 |
| Capacitance | Refer to Fig.7 |
| Safe Operating Area | Refer to Fig.8 |
| Normalized Maximum Transient Thermal Impedance | Refer to Fig.9 |
| Switching Time Waveform | Refer to Fig.10 |
| Unclamped Inductive Switching Waveform | Refer to Fig.11 |
2410121650_HUASHUO-HSU6066_C22359249.pdf
Related Products
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
