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quality N Channel Trench MOSFET HUASHUO HSP6016A Suitable for Synchronous Buck Converters and Power Circuits factory
quality N Channel Trench MOSFET HUASHUO HSP6016A Suitable for Synchronous Buck Converters and Power Circuits factory

N Channel Trench MOSFET HUASHUO HSP6016A Suitable for Synchronous Buck Converters and Power Circuits

Key Attributes
Model Number: HSP6016A
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
167pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
2.188nF@15V
Pd - Power Dissipation:
86.8W
Gate Charge(Qg):
33nC@4.5V
Mfr. Part #:
HSP6016A
Package:
TO-220
Product Description

Product Overview

The HSP6016A is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.

Product Attributes

  • Brand: HS-Semi
  • Product Line: HSP6016A
  • Technology: Trench MOSFET
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 60 V
VGS Gate-Source Voltage ±20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V1 60 A
ID@TC=100 Continuous Drain Current, VGS @ 10V1 38 A
ID@TA=25 Continuous Drain Current, VGS @ 10V1 9.2 A
ID@TA=70 Continuous Drain Current, VGS @ 10V1 7.5 A
IDM Pulsed Drain Current2 135 A
EAS Single Pulse Avalanche Energy3 73 mJ
IAS Avalanche Current 38 A
PD@TC=25 Total Power Dissipation4 86.8 W
PD@TA=25 Total Power Dissipation4 2 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient1 --- 62 /W
RJC Thermal Resistance Junction-Case1 --- 1.44 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 60 --- --- V
BVDSS/TJ BVDSS Temperature Coefficient Reference to 25 , ID=1mA 0.052 --- V/
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=30A 9 12 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2 --- 5 V
VGS(th) VGS(th) Temperature Coefficient -5.76 --- mV/
IDSS Drain-Source Leakage Current VDS=48V , VGS=0V , TJ=25 --- 1 uA
IDSS Drain-Source Leakage Current VDS=48V , VGS=0V , TJ=55 --- 5 uA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=30A 42 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz 1.5 ---
Qg Total Gate Charge (4.5V) VDS=48V , VGS=4.5V , ID=15A 33 --- nC
Qgs Gate-Source Charge 10.5 ---
Qgd Gate-Drain Charge 9.9 ---
Td(on) Turn-On Delay Time VDD=30V , VGS=10V , RG=3.3, ID=15A 10.4 --- ns
Tr Rise Time 9.2 --- ns
Td(off) Turn-Off Delay Time 63 --- ns
Tf Fall Time 4.8 --- ns
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz 2188 --- pF
Coss Output Capacitance 260 --- pF
Crss Reverse Transfer Capacitance 167 --- pF
Diode Characteristics
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- 60 A
ISM Pulsed Source Current2,5 --- 135 A
VSD Diode Forward Voltage2 VGS=0V , IS=A , TJ=25 --- 1.2 V
trr Reverse Recovery Time IF=15A , dI/dt=100A/s , TJ=25 18 --- nS
Qrr Reverse Recovery Charge 14 --- nC

2410121503_HUASHUO-HSP6016A_C5341703.pdf
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