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quality Switching Solutions HUASHUO HSU4002 N Channel MOSFETs with Low Gate Charge and High Current Capacity factory
quality Switching Solutions HUASHUO HSU4002 N Channel MOSFETs with Low Gate Charge and High Current Capacity factory

Switching Solutions HUASHUO HSU4002 N Channel MOSFETs with Low Gate Charge and High Current Capacity

Key Attributes
Model Number: HSU4002
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
23A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
28mΩ@10V,12A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
56pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
593pF@15V
Pd - Power Dissipation:
25W
Gate Charge(Qg):
5.5nC@4.5V
Mfr. Part #:
HSU4002
Package:
TO-252-2
Product Description

HSU4002 N-Ch 40V Fast Switching MOSFETs

The HSU4002 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and gate charge, making it ideal for most synchronous buck converter applications. These MOSFETs offer fast switching capabilities and meet RoHS and Green Product requirements, with 100% EAS guaranteed for reliable performance. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.

Product Attributes

  • Brand: HS-Semi
  • Product Type: N-Ch MOSFETs
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 40 V
VGS Gate-Source Voltage ±20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V1 23 A
ID@TC=100 Continuous Drain Current, VGS @ 10V1 14 A
ID@TA=25 Continuous Drain Current, VGS @ 10V1 6.5 A
ID@TA=70 Continuous Drain Current, VGS @ 10V1 5.2 A
IDM Pulsed Drain Current2 46 A
EAS Single Pulse Avalanche Energy3 15.8 mJ
IAS Avalanche Current 17.8 A
PD@TC=25 Total Power Dissipation4 25 W
PD@TA=25 Total Power Dissipation4 2 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-ambient (Steady State)1 --- --- 62 /W
RJC Thermal Resistance Junction-Case1 --- --- 5 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 40 --- --- V
ΔBVDSS/ΔTJ BVDSS Temperature Coefficient Reference to 25 , ID=1mA --- 0.034 --- V/
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=12A --- --- 28 m
VGS=4.5V , ID=10A --- --- 38 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 --- 2.5 V
ΔVGS(th)/ΔTJ VGS(th) Temperature Coefficient --- -4.56 --- mV/
IDSS Drain-Source Leakage Current VDS=32V , VGS=0V , TJ=25 --- --- 1 µA
VDS=32V , VGS=0V , TJ=55 --- --- 5 µA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=12A --- 8 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.6 --- Ω
Qg Total Gate Charge (4.5V) VDS=20V , VGS=4.5V , ID=12A --- 5.5 --- nC
Qgs Gate-Source Charge --- 1.25 --- nC
Qgd Gate-Drain Charge --- 2.5 --- nC
td(on) Turn-On Delay Time VDD=20V , VGS=10V , RG=3.3Ω ID=1A --- 8.9 --- ns
tr Rise Time --- 2.2 --- ns
td(off) Turn-Off Delay Time --- 41 --- ns
tf Fall Time --- 2.7 --- ns
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 593 --- pF
Coss Output Capacitance --- 76 --- pF
Crss Reverse Transfer Capacitance --- 56 --- pF
Diode Characteristics
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- --- 23 A
ISM Pulsed Source Current2,5 --- --- 46 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25 --- --- 1.2 V

Ordering Information

Part Number Package Code Packaging
HSU4002 TO252-2 2500/Tape&Reel

2410121525_HUASHUO-HSU4002_C7543706.pdf
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