High frequency switching MOSFET HUAKE SMF11N50 with low gate charge and avalanche tested reliability
Key Attributes
Model Number:
SMF11N50
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
11A
RDS(on):
600mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8.1pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.514nF@25V
Pd - Power Dissipation:
48W
Gate Charge(Qg):
33nC
Mfr. Part #:
SMF11N50
Package:
TO-220F
Product Description
Product Overview
The SMF11N50 is a 500V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching applications. It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability. This MOSFET is ideal for High Frequency Switching Mode Power Supplies and Active Power Factor Correction.
Product Attributes
- Brand: HUAKE semiconductors
- Product Series: SMF11N50
- Chip Version: U
- Document Version: 1.0
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 500 | V | |||
| ID | Drain Current - Continuous (Tc=25C) | 11.0* | A | |||
| ID | Drain Current - Continuous (Tc=100C) | 6.96* | A | |||
| IDM | Drain Current - Pulsed (Note1) | 44* | A | |||
| VGSS | Gate-Source Voltage | 30 | V | |||
| EAS | Single Pulsed Avalanche Energy (Limit Reference Value) (Note2) | 619 | mJ | |||
| IAR | Avalanche Current (Note1) | 10.0 | A | |||
| EAR | Repetitive Avalanche Energy (Note1) | 16.0 | mJ | |||
| dv/dt | Peak Diode Recovery dv/dt (Note3) | 4.5 | V/ns | |||
| PD | Power Dissipation(TC =25C) | 48 | W | |||
| -Derate above 25C | 0.38 | W/C | ||||
| Tj | Operating Junction Temperature | 150 | C | |||
| Tstg | Storage Temperature Range | -55 | +150 | C | ||
| RJC | Thermal Resistance, Junction to Case | 2.6 | C /W | |||
| RJA | Thermal Resistance, Junction to Ambient | 62.5 | C /W | |||
| Electrical Characteristics | ||||||
| BVDSS | Drain-source Breakdown Voltage | VGS=0V ,ID=250A | 500 | V | ||
| BVDSS/TJ | Breakdown Voltage Temperature Coefficient | ID=250A (Referenced to 25C) | 0.55 | V/C | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=500V,VGS=0V | 1 | A | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=400V,Tc=125C | 10 | A | ||
| IGSSF | Gate-Body Leakage Current, Forward | VGS=+30V, VDS=0V | 100 | nA | ||
| IGSSR | Gate-Body Leakage Current, Reverse | VGS=-30V, VDS=0V | -100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID=250A | 2.0 | 4.0 | V | |
| RDS(on) | Static Drain-Source On-Resistance | VGS=10 V, ID=5.5A | 0.46 | 0.60 | ||
| gFS | Forward Transconductance | VDS=20 V, ID=5.5A (Note4) | 9.5 | S | ||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=25V,VGS=0V, f=1.0MHz | 1514 | pF | ||
| Coss | Output Capacitance | 144 | pF | |||
| Crss | Reverse Transfer Capacitance | 8.1 | pF | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 250 V, ID = 11 A, RG = 25 (Note4,5) | 30 | ns | ||
| tr | Turn-On Rise Time | 25 | ns | |||
| td(off) | Turn-Off Delay Time | 54 | ns | |||
| tf | Turn-Off Fall Time | 27 | ns | |||
| Qg | Total Gate Charge | VDS = 400 V, ID =11 A, VGS = 10 V (Note4,5) | 33 | nC | ||
| Qgs | Gate-Source Charge | 7.8 | nC | |||
| Qgd | Gate-Drain Charge | 14 | nC | |||
| Drain-Source Diode Characteristics | ||||||
| IS | Maximum Continuous Drain-Source Diode Forward Current | 11 | A | |||
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | 44 | A | |||
| VSD | Drain-Source Diode Forward Voltage | VGS =0V,IS=11.0 A | 1.4 | V | ||
| trr | Reverse Recovery Time | VGS =0V, IS=11.0 A, d IF /dt=100A/s (Note4) | 388 | ns | ||
| Qrr | Reverse Recovery Charge | 3.51 | C | |||
2410121937_HUAKE-SMF11N50_C19725787.pdf
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