Power Control with HUAKE SMT20N60 600V N Channel MOSFET Featuring Low Gate Charge and High Drain Current
Key Attributes
Model Number:
SMT20N60
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
350mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
9pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
3.05nF@25V
Pd - Power Dissipation:
265W
Gate Charge(Qg):
55.2nC@10V
Mfr. Part #:
SMT20N60
Package:
TO-220C
Product Description
SMT20N60 600V N-Channel MOSFET
The SMT20N60 is a 600V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It features a continuous drain current of 20.0A, a low on-resistance of 350m (typ) at VGS=10V, low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, ensuring reliable and efficient performance.
Product Attributes
- Brand: HUAKE semiconductors
- Product Type: N-Channel MOSFET
- Chip Version: U
- Document Version: 1.0
Technical Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit | |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 600 | V | |||
| ID | Drain Current - Continuous (Tc=25C) | 20.0* | A | |||
| ID | Drain Current - Continuous (Tc=100C) | 12.6* | A | |||
| IDM | Drain Current - Pulsed (Note1) | 80.0* | A | |||
| VGSS | Gate-Source Voltage | 30 | V | |||
| EAS | Single Pulsed Avalanche Energy (Limit Reference Value) (Note2) | 1078 | mJ | |||
| IAR | Avalanche Current (Note1) | 14.0 | A | |||
| EAR | Repetitive Avalanche Energy (Note1) | 33 | mJ | |||
| dv/dt | Peak Diode Recovery dv/dt (Note3) | 4.5 | V/ns | |||
| PD | Power Dissipation(TC =25C) | 265 | W | |||
| PD | Derate above 25C | 2.12 | W/C | |||
| Tj | Operating Junction Temperature | 150 | C | |||
| Tstg | Storage Temperature Range | -55 | +150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 0.47 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 62.5 | C/W | |||
| Electrical Characteristics (Tc=25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-source Breakdown Voltage | VGS=0V, ID=250A | 600 | V | ||
| BVDSS /TJ | Breakdown Voltage Temperature Coefficient | ID=250A (Referenced to 25C) | 0.66 | V/C | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=600V, VGS=0V | 1 | A | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=480V, Tc=125C | 10 | A | ||
| IGSSF | Gate-Body Leakage Current, Forward | VGS=+30V, VDS=0V | 100 | nA | ||
| IGSSR | Gate-Body Leakage Current, Reverse | VGS=-30V, VDS=0V | -100 | nA | ||
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250A | 2.0 | 4.0 | V | |
| RDS(on) | Static Drain-Source On-Resistance | VGS=10V, ID=10.0A | 350 | 400 | m | |
| gFS | Forward Transconductance | VDS=20V, ID=10.0A (Note4) | 18 | S | ||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=25V, VGS=0V, f=1.0MHz | 3050 | pF | ||
| Coss | Output Capacitance | 240 | pF | |||
| Crss | Reverse Transfer Capacitance | 9 | pF | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD=300V, ID=20A, RG=25 (Note4,5) | 27.2 | ns | ||
| tr | Turn-On Rise Time | 44.5 | ns | |||
| td(off) | Turn-Off Delay Time | 82.5 | ns | |||
| tf | Turn-Off Fall Time | 44.4 | ns | |||
| Qg | Total Gate Charge | VDS=480V, ID=20A, VGS=10V (Note4,5) | 55.2 | nC | ||
| Qgs | Gate-Source Charge | 13.9 | nC | |||
| Qgd | Gate-Drain Charge | 22.8 | nC | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain-Source Diode Forward Current | 20 | A | |||
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | 80 | A | |||
| VSD | Drain-Source Diode Forward Voltage | VGS=0V, IS=20A | 1.4 | V | ||
| trr | Reverse Recovery Time | VGS=0V, IS=20A, dIF/dt=100A/s (Note4) | 593 | ns | ||
| Qrr | Reverse Recovery Charge | 7.62 | C | |||
2410121937_HUAKE-SMT20N60_C570145.pdf
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