40V P channel MOSFET HUASHUO HSBA100P04 with high cell density trench technology and RoHS compliance
Key Attributes
Model Number:
HSBA100P04
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
722pF
Number:
1 P-Channel
Output Capacitance(Coss):
930pF
Input Capacitance(Ciss):
7.09nF
Pd - Power Dissipation:
52W
Gate Charge(Qg):
115nC@10V
Mfr. Part #:
HSBA100P04
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA100P04 is a P-channel, 40V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and availability as a green device.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Product
- Reliability: 100% EAS guaranteed, full function reliability approved
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSBA100P04 | Drain-Source Voltage (VDS) | -40 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID) @ TC=25 | VGS @ -10V | -100 | A | |||
| Continuous Drain Current (ID) @ TC=100 | VGS @ -10V | -64 | A | |||
| Pulsed Drain Current (IDM) | -295 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 380 | mJ | ||||
| Avalanche Current (IAS) | -50 | A | ||||
| Total Power Dissipation (PD) @ TC=25 | 52.1 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | --- | --- | 25 | /W | ||
| Thermal Resistance Junction-Case (RJC) | --- | --- | 1.8 | /W | ||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -40 | --- | --- | V | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-10V , ID=-20A | --- | 4.6 | 5.8 | m | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-4.5V , ID=-10A | --- | 6 | 9.1 | m | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -1.2 | -1.8 | -2.5 | V | |
| Total Gate Charge (Qg) | VDS=-20V , VGS=-10V , ID=-12A | --- | 115 | --- | nC |
Note: All electrical characteristics are tested at TJ=25 unless otherwise noted. Refer to the datasheet for detailed conditions and further specifications.
2410121629_HUASHUO-HSBA100P04_C2987717.pdf
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