N Channel MOSFET 500V TO 220F Package Featuring Avalanche Tested HUAKE SMF9N50 for Power Electronics
Key Attributes
Model Number:
SMF9N50
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
9A
RDS(on):
850mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
7pF
Number:
1 N-channel
Output Capacitance(Coss):
104pF
Input Capacitance(Ciss):
1.07nF
Pd - Power Dissipation:
45W
Gate Charge(Qg):
29nC
Mfr. Part #:
SMF9N50
Package:
TO-220F
Product Description
Product Overview
The SMF9N50 is a 500V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction. It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, with a typical RDS(on) of 0.68 at VGS=10V. It is available in a TO-220F package.
Product Attributes
- Brand: HUAKE semiconductors
- Product Type: N-Channel MOSFET
- Package: TO-220F
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 500 | V | |||
| ID | Drain Current - Continuous (Tc=25°C) | 9.0* | A | |||
| ID | Drain Current - Continuous (Tc=100°C) | 5.7* | A | |||
| IDM | Drain Current - Pulsed (Note1) | 36* | A | |||
| VGSS | Gate-Source Voltage | ±30 | V | |||
| EAS | Single Pulsed Avalanche Energy (Limit Reference Value) (Note2) | 360 | mJ | |||
| IAR | Avalanche Current (Note1) | 9.0 | A | |||
| EAR | Repetitive Avalanche Energy (Note1) | 13.5 | mJ | |||
| dv/dt | Peak Diode Recovery dv/dt (Note3) | 4.5 | V/ns | |||
| PD | Power Dissipation (TC =25°C) | 45 | W | |||
| -Derate above 25°C | 0.36 | W/°C | ||||
| Tj | Operating Junction Temperature | 150 | °C | |||
| Tstg | Storage Temperature Range | -55 | +150 | °C | ||
| Thermal Characteristics | ||||||
| RθJC | Thermal Resistance, Junction to Case | 2.78 | °C /W | |||
| RθJA | Thermal Resistance, Junction to Ambient | 62.5 | °C /W | |||
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-source Breakdown Voltage | VGS=0V ,ID=250μA | 500 | V | ||
| ΔBVDSS /ΔTJ | Breakdown Voltage Temperature Coefficient | ID=250μA (Referenced to 25°C) | 0.55 | V/°C | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=500V,VGS=0V | 1 | μA | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=400V,TC=125°C | 10 | μA | ||
| IGSSF | Gate-Body Leakage Current,Forward | VGS=+30V, VDS=0V | 100 | nA | ||
| IGSSR | Gate-Body Leakage Current,Reverse | VGS=-30V, VDS=0V | -100 | nA | ||
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID=250μA | 2.0 | 4.0 | V | |
| RDS(on) | Static Drain-Source On-Resistance | VGS=10 V, ID=4.5A | 0.68 | 0.85 | Ω | |
| gFS | Forward Transconductance | VDS=20 V, ID=4.5A (Note4) | 7.0 | S | ||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=25V,VGS=0V, f=1.0MHz | 1070 | pF | ||
| Coss | Output Capacitance | 104 | pF | |||
| Crss | Reverse Transfer Capacitance | 7.0 | pF | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 250 V, ID = 9.0 A, RG = 25 Ω (Note4,5) | 56 | ns | ||
| tr | Turn-On Rise Time | 48 | ns | |||
| td(off) | Turn-Off Delay Time | 92 | ns | |||
| tf | Turn-Off Fall Time | 53 | ns | |||
| Qg | Total Gate Charge | VDS = 400 V, ID =9.0 A, VGS = 10 V (Note4,5) | 29 | nC | ||
| Qgs | Gate-Source Charge | 5.4 | nC | |||
| Qgd | Gate-Drain Charge | 12.3 | nC | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain-Source Diode Forward Current | 9.0 | A | |||
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | 36 | A | |||
| VSD | Drain-Source Diode Forward Voltage | VGS =0V,IS=9.0 A | 1.4 | V | ||
| trr | Reverse Recovery Time | VGS =0V, IS=9.0 A, d IF /dt=100A/μs (Note4) | 341 | ns | ||
| Qrr | Reverse Recovery Charge | 3.0 | μC | |||
2410121937_HUAKE-SMF9N50_C19725786.pdf
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