power switching P channel MOSFET HUASHUO HSS2P10 featuring trench technology and compact SOT 23 package
Key Attributes
Model Number:
HSS2P10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
320mΩ@10V,2A
Gate Threshold Voltage (Vgs(th)):
3V
Type:
P-Channel
Number:
1 P-Channel
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
HSS2P10
Package:
SOT-23L
Product Description
Product Overview
The HSS2P10 is a P-channel Fast Switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for small power switching and load switch applications. This device meets RoHS and Green Product requirements and is available in a SOT-23 package. Key advantages include super low gate charge and excellent Cdv/dt effect decline.Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
- Package: SOT-23
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -100 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -10V1 | -2 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ -10V1 | -1.5 | A | |||
| IDM | Pulsed Drain Current2 | -8 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1.4 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient1 | --- | 125 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 80 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -100 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | --- | -0.0624 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-2A | --- | 255 | 320 | m |
| VGS=-4.5V , ID=-1A | --- | 280 | 340 | m | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -2.0 | -3.0 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | 4.5 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=-80V , VGS=0V , TJ=25 | --- | --- | 10 | uA |
| VDS=-80V , VGS=0V , TJ=55 | --- | --- | 100 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| Qg | Total Gate Charge (-4.5V) | VDS=-50V , VGS=-10V , ID=-2A | --- | 15 | --- | nC |
| Qgs | Gate-Source Charge | --- | 3.4 | --- | nC | |
| Qgd | Gate-Drain Charge | --- | 2.8 | --- | nC | |
| Td(on) | Turn-On Delay Time | VDD=-50V , VGS=-10V , RG=3.3 ID=-1A | --- | 7.3 | --- | ns |
| Tr | Rise Time | --- | 47 | --- | ns | |
| Td(off) | Turn-Off Delay Time | --- | 34 | --- | ns | |
| Tf | Fall Time | --- | 39 | --- | ns | |
| Ciss | Input Capacitance | VDS=-50V , VGS=0V , f=1MHz | --- | 900 | --- | pF |
| Coss | Output Capacitance | --- | 48 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 43 | --- | pF | |
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | --- | --- | -2 | A |
| ISM | Pulsed Source Current2,4 | --- | --- | -8 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | --- | -1.2 | V |
| Part Number | Package Code | Packaging | Quantity |
|---|---|---|---|
| HSS2P10 | SOT-23 | Tape&Reel | 3000 |
2410121656_HUASHUO-HSS2P10_C845592.pdf
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