Load Switch MOSFET HUAYI HYG038N03LR1C2 Single N Channel 30V 84A Avalanche Tested for Battery Protection
Key Attributes
Model Number:
HYG038N03LR1C2
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
84A
RDS(on):
3.3mΩ@10V,20A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
1.7V
Reverse Transfer Capacitance (Crss@Vds):
176pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.486nF
Pd - Power Dissipation:
53W
Gate Charge(Qg):
35.5nC@10V
Mfr. Part #:
HYG038N03LR1C2
Package:
PDFN-8(5x6)
Product Description
Product Overview
The HYG038N03LR1C2 is a single N-Channel Enhancement Mode MOSFET designed for load switch and lithium battery protection board applications. It features a 30V/84A rating with low on-resistance of 3.3 m (typ.) at VGS = 10V and 5.1 m (typ.) at VGS = 4.5V. The device is 100% avalanche tested, reliable, rugged, and available in halogen-free versions. The PDFN8L(5x6) package ensures compact integration.
Product Attributes
- Brand: HUAYI
- Origin: China
- Package Type: PDFN8L(5x6)
- RoHS Compliant: Yes (lead-free, halogen-free)
- MSL Classification: Meets IPC/JEDEC J-STD-020 for lead-free peak reflow temperature.
Technical Specifications
| Parameter | Test Conditions | Symbol | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 30 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Junction Temperature Range | TJ | -55 | 175 | |||
| Storage Temperature Range | TSTG | -55 | 175 | |||
| Source Current-Continuous(Body Diode) | Tc=25 | IS | 84 | A | ||
| Pulsed Drain Current | Tc=25 | IDM | 302 | A | ||
| Continuous Drain Current | Tc=25 | ID | 84 | A | ||
| Continuous Drain Current | Tc=100 | ID | 60 | A | ||
| Maximum Power Dissipation | Tc=25 | PD | 53 | W | ||
| Maximum Power Dissipation | Tc=100 | PD | 26 | W | ||
| Thermal Resistance, Junction-to-Case | RJC | 2.85 | /W | |||
| Thermal Resistance, Junction-to-Ambient | Surface mounted on FR-4 board | RJA | 45 | /W | ||
| Single Pulsed-Avalanche Energy | L=0.1mH, starting TJ=25, RG=25., VGS=10V | EAS | 128 | mJ | ||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | VGS=0V,IDS=250A | BVDSS | 30 | - | - | V |
| Drain-to-Source Leakage Current | VDS=30V,VGS=0V | IDSS | - | 1 | A | |
| Drain-to-Source Leakage Current | TJ=125 | IDSS | - | 50 | A | |
| Gate Threshold Voltage | VDS=VGS, IDS=250A | VGS(th) | 1 | 1.7 | 3 | V |
| Gate-Source Leakage Current | VGS=20V,VDS=0V | IGSS | - | 100 | nA | |
| Drain-Source On-State Resistance | VGS=10V,IDS=20A | RDS(ON) | 3.3 | 4.1 | m | |
| Drain-Source On-State Resistance | VGS=4.5V,IDS=20A | RDS(ON) | 5.1 | 6.6 | m | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | ISD=20A,VGS=0V | VSD* | 0.81 | - | V | |
| Reverse Recovery Time | ISD=20A,dISD/dt=100A/s | trr | 10.4 | - | ns | |
| Reverse Recovery Charge | Qrr | 4.2 | - | nC | ||
| Dynamic Characteristics | ||||||
| Gate Resistance | VGS=0V,VDS=0V,F=1MHz | RG | 2.4 | - | ||
| Input Capacitance | VGS=0V, VDS=25V, Frequency=1.0MHz | Ciss | 1486 | - | pF | |
| Output Capacitance | Coss | 215 | - | pF | ||
| Reverse Transfer Capacitance | Crss | 176 | - | pF | ||
| Turn-on Delay Time | VDD=20V,RG=2.5, IDS=20A,VGS=10V | td(ON) | 8.5 | - | ns | |
| Turn-on Rise Time | Tr | 45.4 | - | ns | ||
| Turn-off Delay Time | td(OFF) | 29.9 | - | ns | ||
| Turn-off Fall Time | Tf | 47.4 | - | ns | ||
| Gate Charge Characteristics | ||||||
| Total Gate Charge | VDS =24V, VGS=10V, IDS=20A | Qg | 35.5 | - | nC | |
| Total Gate Charge | VGS=4.5V | Qg | 18.9 | - | nC | |
| Gate-Source Charge | Qgs | 6.2 | - | nC | ||
| Gate-Drain Charge | Qgd | 11.0 | - | nC | ||
2409302200_HUAYI-HYG038N03LR1C2_C5205138.pdf
Related Products
Integrated bias resistor digital transistor YANGJIE DTC143ECA suitable for surface mount and inverter circuit
Product OverviewThe DTC143ECA is a digital transistor with built-in resistors, designed for surface mount applications. Its integrated bias resistors simplify inverter circuit configuration by eliminating the need for external input resistors. This component is manufactured by Yangzhou Yangjie ...
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
