High Frequency Switching N Channel MOSFET HUAKE SMF20N50 with Low Crss and Fast Switching Speed
Key Attributes
Model Number:
SMF20N50
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
20A
RDS(on):
260mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8.5pF
Number:
1 N-channel
Output Capacitance(Coss):
280pF
Input Capacitance(Ciss):
3.05nF
Pd - Power Dissipation:
67W
Gate Charge(Qg):
51nC
Mfr. Part #:
SMF20N50
Package:
TO-220F
Product Description
Product Overview
The SMF20N50 is a 500V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, offering a typical RDS(on) of 210m at VGS=10V.
Product Attributes
- Brand: HUAKE semiconductors
- Product Type: N-Channel MOSFET
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 500 | V | |||
| Drain Current - Continuous (Tc=25C) | ID | 20.0* | A | |||
| Drain Current - Continuous (Tc=100C) | ID | 12.65* | A | |||
| Drain Current - Pulsed (Note1) | IDM | 80.0* | A | |||
| Gate-Source Voltage | VGSS | 30 | V | |||
| Single Pulsed Avalanche Energy (Limit Reference Value) (Note2) | EAS | 970 | mJ | |||
| Avalanche Current (Note1) | IAR | 14.0 | A | |||
| Repetitive Avalanche Energy (Note1) | EAR | 25.0 | mJ | |||
| Peak Diode Recovery dv/dt (Note3) | dv/dt | 4.5 | V/ns | |||
| Power Dissipation(TC =25C) | PD | 67 | W | |||
| Derate above 25C | 0.54 | W/C | ||||
| Operating Junction Temperature | Tj | 150 | C | |||
| Storage Temperature Range | Tstg | -55 | +150 | C | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to Case | RJC | 1.87 | C/W | |||
| Thermal Resistance, Junction to Ambient | RJA | 62.5 | C/W | |||
| Electrical Characteristics (Tc=25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| Drain-source Breakdown Voltage | BVDSS | VGS=0V ,ID=250A | 500 | V | ||
| Breakdown Voltage Temperature Coefficient | BVDSS /TJ | ID=250A (Referenced to 25C) | 0.55 | V/C | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=500V,VGS=0V | 1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=400V,Tc=125C | 10 | A | ||
| Gate-Body Leakage Current, Forward | IGSSF | VGS=+30V, VDS=0V | 100 | nA | ||
| Gate-Body Leakage Current, Reverse | IGSSR | VGS=-30V, VDS=0V | -100 | nA | ||
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 2.0 | 4.0 | V | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=10 V, ID=10.0A | 210 | 260 | m | |
| Forward Transconductance | gFS | VDS=20 V, ID=10.0A (Note4) | 17.5 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V,VGS=0V, f=1.0MHz | 3050 | pF | ||
| Output Capacitance | Coss | 280 | pF | |||
| Reverse Transfer Capacitance | Crss | 8.5 | pF | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD = 250 V, ID = 20 A, RG = 25 (Note4,5) | 35 | ns | ||
| Turn-On Rise Time | tr | 57 | ns | |||
| Turn-Off Delay Time | td(off) | 86 | ns | |||
| Turn-Off Fall Time | tf | 48 | ns | |||
| Total Gate Charge | Qg | VDS = 400 V, ID =20 A, VGS = 10 V (Note4,5) | 51 | nC | ||
| Gate-Source Charge | Qgs | 15.8 | nC | |||
| Gate-Drain Charge | Qgd | 20.3 | nC | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 20 | A | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 80 | A | |||
| Drain-Source Diode Forward Voltage | VSD | VGS =0V,IS=20 A | 1.4 | V | ||
| Reverse Recovery Time | trr | VGS =0V, IS=20 A, d IF /dt=100A/s (Note4) | 573 | ns | ||
| Reverse Recovery Charge | Qrr | 7.29 | C | |||
2410121937_HUAKE-SMF20N50_C19725790.pdf
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