Low on resistance N Channel MOSFET HUAYI HYG015N03LS2C2 designed for power management and switching
Key Attributes
Model Number:
HYG015N03LS2C2
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
140A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9.2pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
65W
Input Capacitance(Ciss):
3.011nF
Gate Charge(Qg):
44.7nC@10V
Mfr. Part #:
HYG015N03LS2C2
Package:
PDFN5x6-8L
Product Description
HYG015N03LS2C2 N-Channel MOSFET
The HYG015N03LS2C2 is a single N-Channel enhancement mode MOSFET designed for switching applications and power management in DC/DC converters. It offers a low on-resistance of 1.5m (typ.) at VGS = 10V and 2.4m (typ.) at VGS = 4.5V, along with 100% avalanche testing for reliability and ruggedness. Halogen-free options are available.
Product Attributes
- Brand: HUAYI
- Product Code: HYG015N03LS2C2
- Package Type: PDFN5*6-8L
- Lead-Free & Halogen-Free Options Available
Technical Specifications
| Parameter | Test Conditions | Rating | Unit |
|---|---|---|---|
| Absolute Maximum Ratings | |||
| Drain-Source Voltage (VDSS) | 30 | V | |
| Gate-Source Voltage (VGSS) | 20 | V | |
| Maximum Junction Temperature (TJ) | -55 to 175 | C | |
| Storage Temperature Range (TSTG) | -55 to 175 | C | |
| Source Current-Continuous (IS) @ Tc=25C (Mounted on Large Heat Sink) | 140 | A | |
| Pulsed Drain Current (IDM) @ Tc=25C | 504 | A | |
| Continuous Drain Current (ID) @ Tc=25C | 140 | A | |
| Continuous Drain Current (ID) @ Tc=100C | 99 | A | |
| Maximum Power Dissipation (PD) @ Tc=25C | 65 | W | |
| Maximum Power Dissipation (PD) @ Tc=100C | 32 | W | |
| Thermal Resistance, Junction-to-Case (RJC) | 2.3 | C/W | |
| Thermal Resistance, Junction-to-Ambient (RJA) ** | 45 | C/W | |
| Single Pulsed-Avalanche Energy (EAS) L=0.3mH *** | 264 | mJ | |
| Electrical Characteristics | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=250A | 30 | V |
| Drain-to-Source Leakage Current (IDSS) | VDS=30V,VGS=0V | - | 1 A |
| Drain-to-Source Leakage Current (IDSS) @ TJ=125C | - | 50 A | |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250A | 1.0 - 3.0 | V |
| Gate-Source Leakage Current (IGSS) | VGS=20V,VDS=0V | - | 100 nA |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V,IDS=20A | - 1.8 | m |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=4.5V,IDS=20A | - 3.0 | m |
| Diode Forward Voltage (VSD*) | ISD=20A,VGS=0V | - 1.2 | V |
| Reverse Recovery Time (trr) | ISD=20A,dISD/dt=100A/s | - 31.2 | ns |
| Reverse Recovery Charge (Qrr) | - 23.7 | nC | |
| Dynamic Characteristics | |||
| Gate Resistance (RG) | VGS=0V,VDS=0V, Frequency=1.0MHz | - 0.78 | |
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | - 3011 | pF |
| Output Capacitance (Coss) | - 773 | pF | |
| Reverse Transfer Capacitance (Crss) | - 9.2 | pF | |
| Turn-on Delay Time (td(ON)) | VDD=15V,RG=2.5, IDS=20A,VGS=10V | - 12.7 | ns |
| Turn-on Rise Time (Tr) | - 53.1 | ns | |
| Turn-off Delay Time (td(OFF)) | - 30.3 | ns | |
| Turn-off Fall Time (Tf) | - 11.2 | ns | |
| Gate Charge Characteristics | |||
| Total Gate Charge (Qg) @ VGS=10V | VDS =24V, ID=20A | - 44.7 | nC |
| Total Gate Charge (Qg) @ VGS=4.5V | - 21.1 | nC | |
| Gate-Source Charge (Qgs) | - 10.7 | nC | |
| Gate-Drain Charge (Qgd) | - 7.1 | nC | |
2410121314_HUAYI-HYG015N03LS2C2_C2983742.pdf
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