650V N Channel MOSFET HUAKE SMF5N65 with 5A continuous drain current and avalanche tested reliability
Key Attributes
Model Number:
SMF5N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4Ω@10V,2.5A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
11pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
568pF@25V
Pd - Power Dissipation:
35W
Mfr. Part #:
SMF5N65
Package:
TO-220F
Product Description
Product Overview
The SMF5N65 is a 650V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It offers a continuous drain current of 5.0A at 25C, low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it a reliable component for demanding power electronics designs.
Product Attributes
- Brand: HUAKE semiconductors
- Product Code: SMF5N65
- Document Version: B/0
- Date: 2017.08
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 650 | V | |||
| ID | Drain Current - Continuous | (TC=25C) | 5.0* | A | ||
| (TC=100C) | 3.1* | A | ||||
| IDM | Drain Current - Pulsed (Note1) | 20* | A | |||
| VGSS | Gate-Source Voltage | ±30 | V | |||
| EAS | Single Pulsed Avalanche Energy (Note2) | 245 | mJ | |||
| IAR | Avalanche Current (Note1) | 5.0 | A | |||
| EAR | Repetitive Avalanche Energy (Note1) | 10.5 | mJ | |||
| dv/dt | Peak Diode Recovery dv/dt (Note3) | 4.5 | V/ns | |||
| PD | Power Dissipation | (TC =25C) | 35 | W | ||
| -Derate above 25C | 0.27 | W/C | ||||
| Tj | Operating Junction Temperature | 150 | C | |||
| Tstg | Storage Temperature Range | -55 | +150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 3.57 | C /W | |||
| RJA | Thermal Resistance, Junction to Ambient | 62.5 | C /W | |||
| Electrical Characteristics | ||||||
| BVDSS | Drain-source Breakdown Voltage | VGS=0V ,ID=250A | 650 | -- | -- | V |
| BVDSS /TJ | Breakdown Voltage Temperature Coefficient | ID=250A (Referenced to 25C) | -- | 0.65 | -- | V/C |
| IDSS | Zero Gate Voltage Drain Current | VDS=650V,VGS=0V | -- | -- | 1 | A |
| VDS=520V,TC=125C | -- | -- | 10 | A | ||
| IGSSF | Gate-Body Leakage Current,Forward | VGS=+30V, VDS=0V | -- | -- | 100 | nA |
| IGSSR | Gate-Body Leakage Current,Reverse | VGS=-30V, VDS=0V | -- | -- | -100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID=250A | 2.0 | -- | 4.0 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS=10 V, ID=2.5A | -- | 2.4 | 2.8 | |
| gFS | Forward Transconductance | VDS=40 V, ID=2.5A (Note4) | -- | 3.6 | -- | S |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=25V,VGS=0V, f=1.0MHz | -- | 568 | -- | pF |
| Coss | Output Capacitance | -- | 63 | -- | pF | |
| Crss | Reverse Transfer Capacitance | -- | 11 | -- | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 325 V, ID = 5.0 A, RG = 25 (Note4,5) | -- | 29 | -- | ns |
| tr | Turn-On Rise Time | -- | 73 | -- | ns | |
| td(off) | Turn-Off Delay Time | -- | 58 | -- | ns | |
| tf | Turn-Off Fall Time | -- | 53 | -- | ns | |
| Qg | Total Gate Charge | VDS = 520 V, ID =5.0 A, VGS = 10 V (Note4,5) | -- | 13 | -- | nC |
| Qgs | Gate-Source Charge | -- | 4.1 | -- | nC | |
| Qgd | Gate-Drain Charge | -- | 4.9 | -- | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain-Source Diode Forward Current | -- | -- | 5.0 | A | |
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | -- | -- | 20 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS =0V,IS=5.0A | -- | -- | 1.4 | V |
| trr | Reverse Recovery Time | VGS =0V, IS=5.0A, d IF /dt=100A/s (Note4) | -- | 325 | -- | ns |
| Qrr | Reverse Recovery Charge | -- | 2.65 | -- | C | |
2410122013_HUAKE-SMF5N65_C563583.pdf
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