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quality Fast Switching P Channel MOSFET HUASHUO HSBA8119 80V With Low Gate Charge And Reliability Guarantee factory
quality Fast Switching P Channel MOSFET HUASHUO HSBA8119 80V With Low Gate Charge And Reliability Guarantee factory

Fast Switching P Channel MOSFET HUASHUO HSBA8119 80V With Low Gate Charge And Reliability Guarantee

Key Attributes
Model Number: HSBA8119
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
50pF
Number:
1 P-Channel
Output Capacitance(Coss):
390pF
Pd - Power Dissipation:
145W
Input Capacitance(Ciss):
13.3nF
Gate Charge(Qg):
190nC
Mfr. Part #:
HSBA8119
Package:
PRPAK5x6-8L
Product Description

Product Overview

The HSBA8119 is a P-channel 80V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, with 100% EAS guaranteed and full function reliability approval. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench technology.

Product Attributes

  • Brand: HS-Semi
  • Product Type: P-Channel MOSFET
  • Voltage Rating: 80V
  • Switching Speed: Fast Switching
  • Technology: Trench
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage -80 V
VGS Gate-Source Voltage ±20 V
ID@TC=25 Continuous Drain Current, -VGS @ -10V1 -70 A
ID@TC=100 Continuous Drain Current, -VGS @ -10V1 -44 A
IDM Pulsed Drain Current2 -270 A
EAS Single Pulse Avalanche Energy3 710 mJ
IAS Avalanche Current 63 A
PD@TC=25 Total Power Dissipation4 145 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient --- 62 /W
RJC Thermal Resistance Junction-Case1 --- 0.88 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -80 --- --- V
RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V , ID=-20A 12.5 15 m
VGS=-4.5V , ID=-10A 14 17 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.0 -1.8 -2.5 V
IDSS Drain-Source Leakage Current VDS=-80V , VGS=0V , TJ=25 --- 1 uA
VDS=-80V , VGS=0V , TJ=55 --- 10 uA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- ±100 nA
Rg Gate Resistance VGS=0V, VDS=0V, f=1.0MHz 1.7 ---
gfs Forward Transconductance VDS=-10V , ID=-3A 30 --- S
Qg Total Gate Charge VDS=-40V , VGS=-10V , ID=-10A 190 --- nC
Qgs Gate-Source Charge 29 --- nC
Qgd Gate-Drain Charge 55 --- nC
td(on) Turn-On Delay Time VDD=-40V , VGS=-10V , RG=6, ID=-10A 25 --- ns
tr Rise Time 20 --- ns
td(off) Turn-Off Delay Time 180 --- ns
tf Fall Time 88 --- ns
Ciss Input Capacitance VDS=-40V , VGS=0V , f=1MHz 13300 --- pF
Coss Output Capacitance 390 --- pF
Crss Reverse Transfer Capacitance 50 --- pF
Diode Characteristics
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- -70 A
ISM Pulsed Source Current2,5 --- -270 A
VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25 --- -1.2 V
trr Reverse Recovery Time IF=-20A, di/dt=100A/s 35 --- ns
Qrr Reverse Recovery Charge IF=-20A, di/dt=100A/s 45 --- nC
Ordering Information
Part Number Package code Packaging
HSBA8119 PRPAK5*6 3000/Tape&Reel

2410122026_HUASHUO-HSBA8119_C22359243.pdf
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