HYG053N10NS1B MOSFET with 4.8 Milliohm Typical On Resistance and 100 Percent Avalanche Tested Design
Key Attributes
Model Number:
HYG053N10NS1B
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
5.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
76pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
4.036nF@25V
Pd - Power Dissipation:
187.5W
Gate Charge(Qg):
70nC@10V
Mfr. Part #:
HYG053N10NS1B
Package:
TO-263-2L
Product Description
Product Overview
The HYG053N10NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers high performance with a voltage rating of 100V and a continuous drain current of 120A. Key features include a low on-resistance of 4.8 m (typ.) at VGS = 10V, 100% avalanche tested, and a reliable, rugged design. Halogen-free devices are available, complying with RoHS standards.
Product Attributes
- Brand: Hymexa
- Origin: China
- Material: Halogen-Free Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant
Technical Specifications
| Model | Package | VDSS (V) | ID (A) | RDS(ON) (m) @ VGS=10V | Application |
| HYG053N10NS1P/B | TO-220FB-3L | 100 | 120 | 4.8 (typ.) | Switching application, Power management for inverter systems, Battery management |
| HYG053N10NS1P/B | TO-263-2L | 100 | 120 | 4.8 (typ.) | Switching application, Power management for inverter systems, Battery management |
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
| BVDSS | VGS=0V,IDS= 250A | 100 | - | - | V |
| IDSS | VDS=100V,VGS=0V | - | - | 1 | A |
| IDSS (TJ=125C) | VDS=100V,VGS=0V | - | - | 50 | A |
| VGS(th) | VDS=VGS, IDS= 250A | 2 | 3 | 4 | V |
| IGSS | VGS=20V,VDS=0V | - | - | 100 | nA |
| RDS(ON) | VGS= 10V,IDS=50A | - | 4.8 | 5.5 | m |
| VSD | ISD=50A,VGS=0V | - | 0.9 | 1.2 | V |
| trr | ISD=50A,dISD/dt=100A/s | - | 60 | - | ns |
| Qrr | - | - | 106 | - | nC |
| RG | VGS=0V,VDS=0V,F=1MHz | - | 3.4 | - | |
| Ciss | VGS=0V, VDS= 25V, Frequency=1.0MHz | - | 4036 | - | pF |
| Coss | VGS=0V, VDS= 25V, Frequency=1.0MHz | - | 1410 | - | pF |
| Crss | VGS=0V, VDS= 25V, Frequency=1.0MHz | - | 76 | - | pF |
| td(ON) | VDD= 50V,RG=4.0, IDS= 50A,VGS= 10V | - | 19 | - | ns |
| Tr | VDD= 50V,RG=4.0, IDS= 50A,VGS= 10V | - | 93 | - | ns |
| td(OFF) | VDD= 50V,RG=4.0, IDS= 50A,VGS= 10V | - | 52 | - | ns |
| Tf | VDD= 50V,RG=4.0, IDS= 50A,VGS= 10V | - | 86 | - | ns |
| Qg | VDS =80V, VGS=10V,IDs=50A | - | 70 | - | nC |
| Qgs | VDS =80V, VGS=10V,IDs=50A | - | 24 | - | nC |
| Qgd | VDS =80V, VGS=10V,IDs=50A | - | 20 | - | nC |
| Symbol | Parameter | Rating | Unit |
| VDSS | Drain-Source Voltage | 100 | V |
| VGSS | Gate-Source Voltage | 20 | V |
| TJ | Junction Temperature Range | -55 to 175 | C |
| TSTG | Storage Temperature Range | -55 to 175 | C |
| ID | Continuous Drain Current Tc=25C | 120 | A |
| ID | Continuous Drain Current Tc=100C | 84.8 | A |
| IDM | Pulsed Drain Current * Tc=25C | 360 | A |
| PD | Maximum Power Dissipation Tc=25C | 187.5 | W |
| PD | Maximum Power Dissipation Tc=100C | 93.7 | W |
| RJC | Thermal Resistance, Junction-to-Case | 0.8 | C/W |
| RJA | Thermal Resistance, Junction-to-Ambient ** | 62.5 | C/W |
| EAS | SinglePulsed-Avalanche Energy *** L=0.3mH | 360 | mJ |
2410121242_HUAYI-HYG053N10NS1B_C2894735.pdf
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