P Channel MOSFET HUASHUO IRLML6402 Featuring Low RDS ON and Super Low Gate Charge for Power Circuits
Key Attributes
Model Number:
IRLML6402
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@4.5V,4.9A
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
151pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.2nF@15V
Pd - Power Dissipation:
1.31W
Gate Charge(Qg):
14.3nC@4.5V
Mfr. Part #:
IRLML6402
Package:
SOT-23
Product Description
Product Overview
The IRLML6402 is a P-channel, 20V fast switching MOSFET designed for high cell density trenched applications. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and has full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology.
Product Attributes
- Brand: IRLML6402 (Implied from datasheet)
- Technology: P-Channel, Trench MOSFET
- Certifications: RoHS, Green Product
- Package: SOT-23
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -20 | -- | -- | V |
| BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | -- | -0.014 | -- | V/ |
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=-4.5V , ID=-4.9A | -- | 40 | 45 | m |
| VGS=-2.5V , ID=-3.4A | -- | 50 | 60 | m | |
| VGS=-1.8V , ID=-2A | -- | 65 | 85 | m | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -0.4 | -- | -1.0 | V |
| VGS(th) Temperature Coefficient | -- | -- | 3.95 | -- | mV/ |
| Drain-Source Leakage Current (IDSS) | VDS=-16V , VGS=0V , TJ=25 | -- | -- | -1 | uA |
| VDS=-16V , VGS=0V , TJ=55 | -- | -- | -5 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=12V , VDS=0V | -- | -- | 100 | nA |
| Forward Transconductance (gfs) | VDS=-5V , ID=-3A | -- | 12.8 | -- | S |
| Total Gate Charge (Qg) | VDS=-15V , VGS=-4.5V , ID=-3A | -- | 10.2 | 14.3 | nC |
| Gate-Source Charge (Qgs) | -- | -- | 1.89 | 2.6 | nC |
| Gate-Drain Charge (Qgd) | -- | -- | 3.1 | 4.3 | nC |
| Turn-On Delay Time (td(on)) | VDD=-10V , VGS=-4.5V , RG=3.3, ID=-3A | -- | 5.6 | 11.2 | ns |
| Rise Time (Tr) | -- | -- | 40.8 | 73 | ns |
| Turn-Off Delay Time (td(off)) | -- | -- | 33.6 | 67 | ns |
| Fall Time (Tf) | -- | -- | 18 | 36 | ns |
| Capacitance (Ciss, Coss, Crss) | VDS=-15V , VGS=0V , f=1MHz | -- | 857 (Ciss) | 1200 (Ciss) | pF |
| -- | -- | 114 (Coss) | 160 (Coss) | pF | |
| -- | -- | 108 (Crss) | 151 (Crss) | pF | |
| Continuous Source Current (IS) | VG=VD=0V , Force Current | -- | -- | -4.9 | A |
| Pulsed Source Current (ISM) | -- | -- | -- | -14 | A |
| Diode Forward Voltage (VSD) | VGS=0V , IS=-1A , TJ=25 | -- | -- | -1 | V |
| Reverse Recovery Time (trr) | IF=-3A , di/dt=100A/s , TJ=25 | -- | 21.8 | -- | nS |
| Reverse Recovery Charge (Qrr) | -- | -- | 6.9 | -- | nC |
| Continuous Drain Current (ID@TA=25) | VGS @ -4.5V | -- | -- | -4.9 | A |
| Continuous Drain Current (ID@TA=70) | VGS @ -4.5V | -- | -- | -3.9 | A |
| Pulsed Drain Current (IDM) | -- | -- | -- | -14 | A |
| Total Power Dissipation (PD@TA=25) | -- | -- | -- | 1.31 | W |
| Total Power Dissipation (PD@TA=70) | -- | -- | -- | 0.84 | W |
| Storage Temperature Range (TSTG) | -- | -55 | -- | 150 | |
| Operating Junction Temperature Range (TJ) | -- | -55 | -- | 150 | |
| Thermal Resistance Junction-Ambient (RJA) | -- | -- | -- | 120 | /W |
| Thermal Resistance Junction-Ambient (RJA) | (t 10s) | -- | -- | 95 | /W |
| Ordering Information | Part Number: IRLML6402, Package: SOT-23, Packaging: 3000/Tape&Reel | -- | -- | -- | -- |
2410121655_HUASHUO-IRLML6402_C518785.pdf
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