P Channel MOSFET SOT 23 Package Featuring HUASHUO FDN338P Ideal for Power Switching Applications
Key Attributes
Model Number:
FDN338P
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
130mΩ@2.5V,2A
Gate Threshold Voltage (Vgs(th)):
300mV
Reverse Transfer Capacitance (Crss@Vds):
73pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
677pF@15V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
10.1nC@4.5V
Mfr. Part #:
FDN338P
Package:
SOT-23
Product Description
FDN338P P-Ch 20V Fast Switching MOSFETs
The FDN338P is a high cell density trenched P-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. It meets RoHS and Green Product requirements with full function reliability approval. This MOSFET offers super low gate charge and excellent Cdv/dt effect decline due to its advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi (implied by www.hs-semi.cn)
- Product Type: P-Channel MOSFET
- Package: SOT-23
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -20 | V | |||
| VGS | Gate-Source Voltage | ±12 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -4.5V1 | -3 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ -4.5V1 | -2.4 | A | |||
| IDM | Pulsed Drain Current2 | -12 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient1 | --- | 125 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 80 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -20 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-3A | 89 | 100 | m | |
| VGS=-2.5V , ID=-2A | 130 | 140 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.3 | -0.5 | -1.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=-16V , VGS=0V , TJ=25 | --- | -1 | uA | |
| VDS=-16V , VGS=0V , TJ=55 | --- | -5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=±12V , VDS=0V | --- | ±100 | nA | |
| gfs | Forward Transconductance | VDS=-5V , ID=-3A | 12.2 | --- | S | |
| Qg | Total Gate Charge (-4.5V) | VDS=-15V , VGS=-4.5V , ID=-3A | 10.1 | --- | nC | |
| Qgs | Gate-Source Charge | 1.21 | --- | nC | ||
| Qgd | Gate-Drain Charge | 2.46 | --- | nC | ||
| Td(on) | Turn-On Delay Time | VDD=-10V , VGS=-4.5V , RG=3.3 ID=-3A | 5.6 | --- | ns | |
| Tr | Rise Time | 32.2 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 45.6 | --- | ns | ||
| Tf | Fall Time | 29.2 | --- | ns | ||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 677 | --- | pF | |
| Coss | Output Capacitance | 82 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 73 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | --- | -3 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | -1 | V | |
| Ordering Information | ||||||
| Part Number | FDN338P | |||||
| Package code | SOT-23 | |||||
| Packaging | 3000/Tape&Reel | |||||
Notes:
- The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
- The data tested by pulsed, pulse width ≤ 300us, duty cycle ≤ 2%.
- The power dissipation is limited by 150 junction temperature.
- The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121641_HUASHUO-FDN338P_C518789.pdf
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