p channel mosfet HUASHUO HSBA3031 featuring 100 percent EAS guarantee and green product certification
Key Attributes
Model Number:
HSBA3031
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+175℃
RDS(on):
7.2mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
140pF@25V
Number:
1 P-Channel
Input Capacitance(Ciss):
3.45nF@25V
Pd - Power Dissipation:
90W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
HSBA3031
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA3031 is a P-channel, 30V fast switching MOSFET designed with high cell density trench technology, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. It meets RoHS and Green Product requirements, with 100% EAS guaranteed and full function reliability approved. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1,6 | -70 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V1,6 | -50 | A | |||
| IDM | Pulsed Drain Current2 | -200 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 80 | mJ | |||
| IAS | Avalanche Current | -40 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 90 | W | |||
| TSTG | Storage Temperature Range | -55 | 175 | |||
| TJ | Operating Junction Temperature Range | -55 | 175 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient 1(t≤10S) | --- | 20 | /W | ||
| RJA | Thermal Resistance Junction-ambient 1(Steady State) | --- | 50 | /W | ||
| RJC | Thermal Resistance Junction-case 1 | --- | 1.6 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -30 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-20A | 6 | 7.2 | m | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-15A | 9.5 | 12 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.2 | --- | -2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=25 | --- | -1 | uA | |
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=55 | --- | -5 | uA | |
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.2 | --- | ||
| Qg | Total Gate Charge (-10V) | VDS=-15V , VGS=-10V , ID=-18A | 60 | --- | nC | |
| Qgs | Gate-Source Charge | 9 | --- | nC | ||
| Qgd | Gate-Drain Charge | 15 | --- | nC | ||
| Td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=3.3, ID=-20A | 17 | --- | ns | |
| Tr | Rise Time | 40 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 55 | --- | ns | ||
| Tf | Fall Time | 13 | --- | ns | ||
| Ciss | Input Capacitance | VDS=-25V , VGS=0V , f=1MHz | 3450 | --- | pF | |
| Coss | Output Capacitance | 255 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 140 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | -70 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | -1.2 | V | |
| trr | Reverse Recovery Time | IF=-20A , di/dt=100A/µs , TJ=25 | 22 | --- | nS | |
| Qrr | Reverse Recovery Charge | 72 | --- | nC | ||
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSBA3031 | PRPAK5*6 | 3000/Tape&Reel | ||||
2410121656_HUASHUO-HSBA3031_C701056.pdf
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