Trenched N Channel MOSFET HUASHUO HSS6014 with High Cell Density and Excellent CdV dt Effect Decline
Key Attributes
Model Number:
HSS6014
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
40mΩ@10V,6A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
46pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.027nF@15V
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
HSS6014
Package:
SOT-23L
Product Description
Product Overview
The HSS6014 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge and excellent CdV/dt effect decline, enabled by advanced high cell density trench technology.Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel MOSFET
- Technology: Trench MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSS6014 | Drain-Source Voltage (VDS) | 60 | V | |||
| Gate-Source Voltage (VGS) | ±20 | V | ||||
| Continuous Drain Current (ID) @ TC=25, VGS=10V1 | 6 | A | ||||
| Continuous Drain Current (ID) @ TC=100, VGS=10V1 | 4.5 | A | ||||
| Continuous Drain Current (ID) @ TA=25, VGS=10V1 | 6.5 | A | ||||
| Continuous Drain Current (ID) @ TA=70, VGS=10V1 | 4.5 | A | ||||
| Pulsed Drain Current (IDM)2 | 18 | A | ||||
| Avalanche Current (IAS) | 21 | A | ||||
| Total Power Dissipation (PD) @ TC=254 | 2.5 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-ambient (RJA)1 | --- | 125 | /W | |||
| Thermal Resistance Junction-Case (RJC)1 | --- | 95 | /W | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=250µA | 60 | --- | --- | V | |
| Static Drain-Source On-Resistance (RDS(ON))2 | VGS=10V, ID=4A | --- | 33 | 40 | mΩ | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS, ID=250µA | 1.0 | --- | 2.5 | V | |
| HSS6014 | Total Gate Charge (Qg) (10V) | VDS=48V, VGS=10V, ID=5A | --- | 19 | nC | |
| Input Capacitance (Ciss) | VDS=15V, VGS=0V, f=1MHz | --- | 1027 | --- | pF | |
| Output Capacitance (Coss) | --- | 65 | --- | pF | ||
| HSS6014 | Reverse Recovery Time (trr) | IF=15A, dI/dt=100A/µs, TJ=25 | --- | 12.2 | nS | |
| Reverse Recovery Charge (Qrr) | --- | 7.3 | nC |
Ordering Information:
| Part Number | Package Code | Packaging |
|---|---|---|
| HSS6014 | SOT-23L | 3000/Tape&Reel |
2410121641_HUASHUO-HSS6014_C508451.pdf
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