Fast switching MOSFET HUASHUO HSBB6115 60V P channel with low gate charge and superior C dv dt effect
Key Attributes
Model Number:
HSBB6115
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
26A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
141pF
Number:
1 P-Channel
Input Capacitance(Ciss):
3.635nF
Output Capacitance(Coss):
224pF
Pd - Power Dissipation:
5.2W
Gate Charge(Qg):
25nC@4.5V
Mfr. Part #:
HSBB6115
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB6115 is a P-channel, 60V fast-switching MOSFET designed for synchronous buck converter applications. It features high cell density trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge and excellent Cdv/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced high cell density Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, -VGS @ -10V1 | -26 | A | |||
| ID@TC=100 | Continuous Drain Current, -VGS @ -10V1 | -16 | A | |||
| IDM | Pulsed Drain Current2 | -70 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 113 | mJ | |||
| IAS | Avalanche Current | 47.6 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 5.2 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 4 | /W | ||
| Product Summary | ||||||
| Model | HSBB6115 | |||||
| Type | P-Ch | |||||
| Voltage | 60V | |||||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -60 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | --- | -0.035 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-10A | --- | 20 | 25 | m |
| VGS=-4.5V , ID=-8A | --- | 25 | 33 | VGS=-4.5V , ID=-8A | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | --- | -2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | 4.28 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=-48V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=-48V , VGS=0V , TJ=55 | --- | --- | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| gfs | Forward Transconductance | VDS=-10V , ID=-12A | --- | 23 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 7 | --- | |
| Qg | Total Gate Charge | VDS=-20V , VGS=-4.5V , ID=-12A | --- | 25 | --- | nC |
| Qgs | Gate-Source Charge | --- | 6.7 | --- | nC | |
| Qgd | Gate-Drain Charge | --- | 5.5 | --- | nC | |
| Td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=3.3, ID=-1A | --- | 38 | --- | ns |
| Tr | Rise Time | --- | 23.6 | --- | ns | |
| Td(off) | Turn-Off Delay Time | --- | 100 | --- | ns | |
| Tf | Fall Time | --- | 6.8 | --- | ns | |
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | --- | 3635 | --- | pF |
| Coss | Output Capacitance | --- | 224 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 141 | --- | pF | |
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | -26 | A |
| ISM | Pulsed Source Current2,5 | --- | --- | -70 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | --- | -1 | V |
| Ordering Information | ||||||
| Part Number | Package code | Packaging | HSBB6115 | PRPAK3*3 | 3000/Tape&Reel | |
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300s, duty cycle 2%.
3. The EAS data shows Max. rating. The test condition is VDD=-25V, VGS=-10V, L=0.1mH, IAS=-47.6A.
4. The power dissipation is limited by 150 junction temperature.
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121456_HUASHUO-HSBB6115_C845604.pdf
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